ABLEBOND 190 Search Results

Ablecube

Abstract: ATM-0018 Ablestik ATM-0087 ablebond ablebond technical 8200C ATM-0089 ablebond ablestik ablestik ablebond
Contextual Info: PILOT TECHNICAL DATASHEET ABLEBOND 8200C ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE DESCRIPTION ABLEBOND® 8200C low bleed die attach adhesive is designed for small and medium sized dies across a variety of leadframes including PPF, Cu and Ag. This electrically conductive adhesive offers improved JEDEC

JEDEC JESD22-B116 free

Abstract: SUMIKON EME-G700 EME-G700 ablebond 3230 SUMItomo EME-G700 Sumitomo EME-G700 material Ablebond 84-1*SR4 Ablebond 8390 sumitomo G700 Tg ablebond 8390 cure time
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0212-02 DATE: 12/20/2002 Product Affected: TSOP package family (see attachment for affected part #s). Date Effective: 3/20/2003 Contact: George Snell

Ablebond 190

Abstract: ablebond technical
Contextual Info: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: 100 kHz Typical • Single Supply Operation:

Ablebond 36-2

Abstract: 71-1LM1 HMMC-5220 Ablebond 190 ablebond technical hmmc-5
Contextual Info: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

Contextual Info: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

Contextual Info: What HEWLETT 1 "KM PACKARD DC - 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC 5220 Features • High Bandwidth, F_ldB: 16 GHz Typical ' GND 1 v cc GND • M oderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P id B out @ 1-5 GHz: 12 dBm Typical • Low 1/f N oise Corner:

Ablebond 190

Contextual Info: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: 100 kHz Typical • Single Supply Operation:

Ablebond 71

Abstract: HP Application Note 934 Ablebond HMMC-5200 Ablebond 190 Ablebond 36-2
Contextual Info: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

Contextual Info: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical IN OUT

Contextual Info: What H EW LETT 1 W M P ACK A RD DC - 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC 5200 Features • High Bandwidth, F_ldB: 21 GHz Typical ' GND 1 Vcc 1 1 ' GND 1 • M oderate Gain: S>@ 9.5 dB ±1 dB @ 1.5 GHz • P id B ' 1 @ 1-5 GHz: 12 dBm Typical

Ablebond 84-1*SR4

Abstract: z9925 EIAJ ED-4701 MARK A48 857L TSMC 0.35um Volt, SPDM, CMOS 98068A 0.6 um cmos process ablebond 84-1lmisr4
Contextual Info: Reliability Summary Report PI6CV857A August 28, 2002 Reliability by Design Page 1 of 20 INDEX: Commitment to Quality: Page 3 Product Family and Wafer Fab Process: Page 4 Wafer Fab Subcontractors and Codes: Page 4 Standard Package Type Code and Dimensions:

Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

Contextual Info: e=DStanford Microdevices Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. DC-10 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

NDA-310-D

Abstract: VCC1
Contextual Info: NDA-310-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description

84-1LMI

Abstract: NDA-310-D
Contextual Info: NDA-310-D  *D,Q3*D$V +%7 00,& ',675,%87 ' $03/, ,(5 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs • Linear and Saturated Amplifiers GENERAL PURPOSE

Ablestik 84-1LMIT1

Abstract: 120C 155C 84-1LMIT1 SNA-200 SNA-276
Contextual Info: Product Description SNA-200 Stanford Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 16dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

110C

Abstract: 140C 155C 84-1LMIT1 SNA-600 SNA-676 linear amplifier P1dB 36dBm
Contextual Info: Product Description SNA-600 Stanford Microdevices’ SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

6233 diagram

Abstract: 13.575 A004R AMMC-6233
Contextual Info: AMMC-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)

NT 407 F transistor

Abstract: SNA-376 nt 407 f 100C 120C 135C 155C 84-1LMIT1 SNA-300
Contextual Info: Product Description SNA-300 Stanford Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

NT1004

Abstract: Ablestik 84-1LMIT1 120C 155C 84-1LMIT1 DC-10 SNA-100 SNA-176 DB266
Contextual Info: Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

AMMC-6233

Abstract: AV02-0312EN 30458 A004R 6233
Contextual Info: AMMC-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)

Contextual Info: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable

Contextual Info: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad­ band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias

NDA-310-D

Abstract: 84-1LMI Ablebond 190
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-310-D DC-15 GHz 6000048 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz