ABV MARKING Search Results

ABVZ

Abstract: 1N1742 1N1742A 20C6
Contextual Info: MIL-S-19500/298 21 Ocmbor 1964 ● MILITARY SEMICONDUCTOR SPECIFICATION DEVfCE, TYPE 1. USAF DIODE, SILICON 1N1742A SCOPE 1.1 Oescri Ion. This specification covers voltxe-re + erence &ode, and is in accordance ehalf not be used for new design. 1.2 Madmum

Contextual Info: S E M IC O N D U C T O R tm FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and R DS on . This BGA

Contextual Info: S E M IC O N D U C T O R tm FDD6612A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: E M I C O N D U C T O R tm FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

FDZ201N

Contextual Info: S E M IC O N D U C T O R tm FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space

Contextual Info: S E M IC O N D U C TO R tm FDC6305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features T hese N -C hannel low th re sh o ld 2.5V sp e cifie d MOSFETs are produced using Fairchild Semiconductor's ad van ced P ow erT rench process th a t has been

Contextual Info: EMI C O N D U C T O R PRELIMINARY tm FDD5680 N-Channel, PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize the on-state

78H68

Abstract: marking 5U MARKING IBW marking A9 62b21
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E78E

Abstract: 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787
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marking 8d

Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
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Contextual Info: 3B=*'/@6 #<?5"#&E฀$฀&9-88&53:-8'=-:>5>?;= $=;0@/?฀&@99-=D 7MI[\YMZ 9I S฀G4?฀* 6;4AA8? ' 9I"^]#$\Pf S฀A;4A68@8AF฀@B78 S฀&B:<6฀?8H8?฀ /฀D4F87 %+ K ) =I ฀/ 0( \ ) =I  ฀/ )+( $9 %*&( 6 S฀-฀CDBF86F87 F=%JIEF%. S฀+G4?<9<87฀466BD7<A:฀FB฀฀+

Contextual Info: S E M IC O N D U C T O R ADVANCE INFORMATION tm FDZ5045N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5045N minimizes both PCB space and R DS on . This BGA

FDD5690

Contextual Info: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDS9933A

Contextual Info: c ; CJ V :L jL J C v FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET G eneral Description Features These P-Channel 2.5V specified M OSFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B

Contextual Info: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B

IN5008

Abstract: 1N5008 1N5022 1N5009 IN4992 1N4938-1 1N4942 1N4944 1N4947 1N4948
Contextual Info: PIV lo 25°C VF IR Volts Amps Volts mA Type No. 1N4938-1 1N4942 1N4944 1N4946 1N4947 1N4948 Zener Type No. .1 55QC A 1.0 200 1.0 400 600 1.0 800 1.0 1.0 1000 2ener foltage 3t IzT Volts @ mA 200 1N4954 1N4955 1N4956 6.8 7.5 8.2 1N4957 1N4958 1N4959 9.1 10.0

p281

Abstract: CY25811 CY25812 CY25814 i2811
Contextual Info: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B

Contextual Info: =M l C O N D U C T O R PRELIMINARY tm FDS6614A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize on-state

Contextual Info: ABRIDGED DATA SHEET 19-3375; Rev 0; 7/04 Dual SPDT Analog Switches with Over-Rail Signal Handling The MAX4850/MAX4850H/MAX4852/MAX4852H family of dual SPDT single-pole/double-throw switches operate from a single +2V to +5.5V supply and can handle signals greater than the supply rail. These switches feature low 3.5Ω or 3.5Ω/7Ω on-resistance with low oncapacitance, making them ideal for switching audio

MAX4852

Abstract: MAXIM TOP MARKING MAX4850 MAX4850ETE MAX4850H MAX4850HETE MAX4852H marking abz MAXIM MARKING AAAA JEDEC-MO-220
Contextual Info: ABRIDGED DATA SHEET 19-3375; Rev 0; 7/04 Dual SPDT Analog Switches with Over-Rail Signal Handling The MAX4850/MAX4850H/MAX4852/MAX4852H family of dual SPDT single-pole/double-throw switches operate from a single +2V to +5.5V supply and can handle signals greater than the supply rail. These switches feature low 3.5Ω or 3.5Ω/7Ω on-resistance with low oncapacitance, making them ideal for switching audio

marking code maxim label

Abstract: MARKING W1 AD CBVK741B019 F011 F63TNR FDS6614A FDS9953A L86Z
Contextual Info: =M l C O N D U C T O R PRELIMINARY tm FDS6614A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

Contextual Info: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

TOP MARK

Abstract: MAX6400 MAX6401 MAX6402 MAX6404 MAX6405 MARKING ADG UCSP4 MAX6404BS40 marking code acw transistor
Contextual Info: 19-2043; Rev 0; 5/01 µP Supervisory Circuits in 4-Bump 2 ✕ 2 Chip-Scale Package Applications Portable/Battery-Powered Equipment Cell Phones PDAs MP3 Players Pagers Selector Guide PART NOMINAL VTH (V) RESET/RESET OUTPUT TYPE MAX6400 2.20 to 3.08 Push-Pull, Active-Low