P281 Search Results

p281

Abstract: P28-1 TRANSISTOR P281
Contextual Info: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

ms8351

Contextual Info: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)

Contextual Info: GaAs Schottky Diodes TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads

Contextual Info: GaAs Schottky Diodes TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads

Contextual Info: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)

Contextual Info: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance 45 fF Typ. Low Series Resistance (7  Typ.)

CY25811

Abstract: CY25812 CY25814 P2811 P2811A-08ST P2812 P2814
Contextual Info: P2811/12/14 October 2003 rev Low-Power EMI Reduction IC Features Deviation and Spread Option Selections section . These combinations include Down Spread, Center Spread and percentage deviation range from ±0.625% to -3.50%. ƒ FCC approved method of EMI attenuation

Contextual Info: polyfet rf devices P281 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: GaAs Schottky Diodes Low RS Series Pair TM MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance 65 fF Typ. Low Series Resistance (3  Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads Description

Contextual Info: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B

p281

Abstract: CY25811 CY25812 CY25814 i2811
Contextual Info: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B

Contextual Info: P2811/12/14 October 2003 rev Low-Power EMI Reduction IC Features Deviation and Spread Option Selections section . These combinations include Down Spread, Center Spread and percentage deviation range from ±0.625% to -3.50%. ƒ FCC approved method of EMI attenuation

P2812

Abstract: CY25811 CY25812 CY25814 P2811 P2814
Contextual Info: Preliminary January 2003 P2811/12/14 Low Power EMI Reduction IC Features • • • • • • FCC approved method of EMI attenuation Provides up to 15 dB EMI reduction Generates 1X, 2X, and 4X low EMI spread spectrum clock of the input frequency 1X: P2811, 2X: P2812, 4X: P2814

P2811

Abstract: P2812 P2814
Contextual Info: PRELIMINARY Specification Alliance Semiconductor P2811/12/14 Low Power EMI Reduction IC FEATURES • FCC approved method of EMI attenuation • Provides up to 15 dB EMI Reduction • Generates 1X, 2X, and 4X low EMI spread spectrum clock of the input frequency

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed C M O S static RAM • Equal access and cycle times — Commercial: 1 2 /1 5/20/25ns • O ne Chip S elect plus one Output Enable pin

Contextual Info: CMOS ASYNCHRONOUS FIFO 65,536 X 9 ADVANCED INFORMATION IDT7208 Integrated Device Technology, Inc. internal pointers that load and empty data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25 /30/3 5/45 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 20/25/35/45ns (max.)

Contextual Info: CMOS STATIC RAM 64K 8K x 8-BIT IDT7164S IDT7164L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed ad dress/chip se le ct access tim e — M ilitary: 20 /25/3 0/35 /45/55/7 0/85 ns (m ax.) — C om m ercia l: 15/2 0/25 /30/35ns (m ax.)

IDT7203

Abstract: IDT7204 IDT7205 IDT7206 IDT7207 IDT7208 IDT720X 7208
Contextual Info: IDT7203 IDT7204 IDT7205 IDT7206 IDT7207 IDT7208 CMOS ASYNCHRONOUS FIFO 2,048 x 9, 4,096 x 9 8,192 x 9, 16,384 x 9 32,768 x 9, 65,536 x 9 FEATURES: • • • • • • • • • • • • • • • • • • First-In/First-Out Dual-Port memory 2,048 x 9 organization IDT7203

P281 B01

Abstract: G187
Contextual Info: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style

Contextual Info: Product Obsolete/Under Obsolescence R XC4000XLA Family Field Programmable Gate Arrays Package Pinouts XC4013XLA Pinout Table XC4013XLA Pinout Table Continued XC4013XLA Pinout Table PAD NAME PQ160 PQ208 PQ240 I/O – – P21 BG256 H1 PAD NAME PQ160 PQ208

IDT71256

Abstract: IDT71256L IDT71256S
Contextual Info: CMOS Static RAM 256K 32K x 8-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ The IDT 71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power

transistor bl p89

Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8
Contextual Info: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet

B8000

Abstract: Miniature Switch Miniature Switches Electroswitch P281B P281 SA1RV20 Electroswitch series 20 B8103 B8500
Contextual Info: MINIATURE SWITCHES Sub Miniature Pushbutton Switches for Printed Circuit Boards — Wave Solderable Series B8000 PCB Pushbutton Switches SPECIFICATIONS • • • • Mechanical life — 500,000 operations minimum Contact resistance — 25 milliohms maximum