AC 144 AA Search Results

dq35j

Contextual Info: IBM13T8644MPE 8M x 64 PC100 SDRAM SO DIMM Preliminary Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 CAS Latency fcK Clock Frequency tcK Clock Cycle *AC | Clock Access Tim e |

Contextual Info: PhaseCap B25667-A5147-A175 MKK525-I-12,5-01 4RB5 125-5 AA 52 Characteristics CN UN fN QN IN tan δ 0 1x 144 AC 525 50 12,5 1x 24 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 29 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

Contextual Info: For 8 «ml-Rlgld Cablo T N C aartoa 60 ohm Connector* tor eam klgld oabte a n highly reilabto, low V S W R oonnaotora for uaa on .088-Inch, . 141-Inch, . 260-Inch and 325 -Incheam klgld oabtoa. Each oonneotor body andfor ooupHng nut la m a d * of atalnlaaa ataal tor long life T h * adder-on oantar oontaot to

1.0KE28A

Contextual Info: SIE D niCRosEni coRP • bllSñbS □002053 aaa ■ Microsemi Corp. SCOTTSDALE, AZ SANTA ANA. CA nsc 1.0 K E 5 thru 1.0 K E 1 7 0 A For more information ca 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • AVAILABLE IN RANGES FROM 5.0 TO 170 VOLTS • AVAILABLE IN BIDIRECTIONAL FOR AC APPLICATIONS

Contextual Info: 170 VAC 149 Spwte Avenue, Pfiham , n y 10003-iase f - — fggiMlljJfjll _ r w KfTnTJcKJHliP « n g b m r in g aaaistmKtorto p b & m o n to f- CaUTotfFn* 8 0 0 -4 3 1 -1 0 9 4 IN N Y CALL 0 1 4 -0 0 9 -9 5 1 4 FAX 914-689-5565 AC-DC LINEAR MODULES . Series LAC/TLAC Regulated, Isolated

8pin 382 229

Abstract: U35X
Contextual Info: Outline drawings Dimensions in mm and inch 1 mm = 0.0394" 1 TO-263 AA E C— i. T0-220 AB TO-247 SMD 4 TO-247 AD r 12 B ^ i j D ° 1 i I1 3 X U n f i t c — (l-f ki.oio toiftgiAgEI I ' i j J cjU i j r i " 1. 2. 3. 4. ~n ' — v r Gate Drain (Collector)

3160D

Abstract: MAF-1206-33 MAF-1210-33 MAF-1215-33 MAF-1220-33 VDE0565
Contextual Info: uum aA MAF-SERIES DENSEI-LAMBDA • Features 1 For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (2) Attenuation effect against high voltage pulse noise (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz)

17-18L

Contextual Info: Outline drawings D im ensions in mm and inch 1 mm = 0.0394" 4 TO-247 SMD TO-220 AB TO-263 AA TO-247 AD E H f 1" i n A 4! M J D o , dT T *T 2 CJ i; 3 I ♦ B f I * H i m F * f A I p- C : A 1. Gate 2. Drain (Collector) 3. Source (Emitter) 4. Drain (Collector)

DSP56301

Contextual Info: AC Electrical Characteristics Port A Port A VCC = 3.3 V ± 0.3 V; TJ = −40˚C to +100 ˚C, CL = 50 pF + 2 TTL Loads Table 8 SRAM Read and Write Accesses No. 100 101 102 103 Characteristics Address Valid and AA Assertion Pulse Width Address Valid to WR Assertion

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JUNE 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION NOVEMBER 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

OS0020

Abstract: 8pin 382 229 DO-203
Contextual Info: Outline drawings Dimensions in mm and inch 1 mm = 0.0394" TO-220 AB TO-247 AD 3a TO-204 AE 3b TO-204 AA Dim. M illimeter Min. Max. I- c Fig. 1a: 1 = NC, 2 = + , 3 = Fig. 1b: 1 = CTL, 2 = +, 3 = NC = No Connection Dim. M illimeter Min. Max. Sym. Inches Min.

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES •             400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock

53-78-1

Abstract: E58126 53-03-2AC 5300-6.000 D257 D149 D150 5300 1.500 astm D150 53-77-4
Contextual Info: Standard Products - Insulators Home | Contact Us | About Aavid | Sales Rep Log In -Useful Links- Search by part # Thermalsil III RoHS Compliant Thermally Conductive Silicone Rubber Insulators Check distributor part inventory Browse Heat sinks - By Device -

M54020 circutor

Abstract: m50730 M54410 M54020 M51231 M51B11 CVM-BD-RED-C420-H profibus vs. modbus M50790 LM50-TCP
Contextual Info: Electrical measurement and control CVM Power analyzers M.5 M.5 CVM Power analyzers M.5 - CVM Power analyzers Introduction• · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 3

D149

Abstract: D150 D257
Contextual Info: Standard Products - Insulators Home | Contact Us | About Aavid -Useful Links- Search by part # Thermalsil III RoHS Compliant Check distributor part inventory Browse Heat sinks - By Device - By Product Line -Attachment Methods- Thermally Conductive Silicone Rubber

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

ep600i

Abstract: JEDEC MS-034-AAJ-1 BGA Package 172 EP1800 MS-034 AAF-1 192PGA pdip 24 altera AP672 EP610 epm9560 die
Contextual Info: Altera Device Package Information May 2001, ver. 9.1 Introduction Data Sheet This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.

Contextual Info: SIEM ENS 3.3 V DRAM Modules HYM 64Vx005GCD L -60 144 pin SO-DIMM EDO-DRAM Modules 8 MB, 16 MB, 32 MB & 64 MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules for PC notebook applications • Chip-on Board (COB) Assembly Technique

MT18DT8144G

Contextual Info: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM

AA150XN01

Abstract: CXA-0384 tdk lcd inverter cxa-0384 tdk inverter lamps tdk lcd inverter BHR-02VS-1 SM02 T-351863D150-FW-A-AA CN31 cxa inverter tdk
Contextual Info: DC- AC INVERTER UNIT CXA-0384 8W DUAL OUTPUTS WITH DIMMING FUNCTION Applicable LCD: AA150XN01 (MITSUBISHI) T-351863D150-FW-A-AA (OPTREX) FEATURES: a. This inverter is for two lamps. It has Dimming function(PWM Syste m) and Remote function. b. This product has shutdown function.

208 pin rqfp drawing

Abstract: 240 pin rqfp drawing BGA 144 MS-034 AAL-1 bga package weight 192 BGA PACKAGE thermal resistance
Contextual Info: Altera Device Package Information April 2002, ver. 10.2 Introduction Data Sheet This data sheet provides the following package information for all Altera devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.