ACRIAN
Abstract: C1-12 C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power
Contextual Info: 0182998 ACRIAN 97D INC [ACRIAN INC T7 01318 DE D 7 "-7 3 -0 5 ' D i ñ a b a □DD131Û 5 |~¡ • IS iS IK E i w iJ S R £ S * ■ » mm M l ¡¿S I H P S P . H a l M U W m m m M m ms& I GENERAL C1-12 D E S C R IP TIO N 1 WATT - 12.5 VOLT 450-512 MHz The C1-12 is specifically designed for UHF
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C1-12
DQD132G"
C1-12-3
470pf
005jif
L4-1T3/16"
ACRIAN
C1-12-2
C1-12-3
acrian 1
C1123
acrian inc
C112-2
acrian rf power
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8Z-2
Abstract: ACRIAN acrian inc fn 155 Scans-00115726
Contextual Info: 0182998 ACRIAN 97D 0 13 26 INC ACRIAN INC ^7 K _H 9gH _ M M aaM n h <h h h | a g r j u a aM ^ «aa H tM M M ItM ^ M t m m u M > m m a DE I OlfiSTTfl DOOlHSb 1 I M M1- W „ „ „ ,. . IBSHüflKSIBMHmeaHR! C5-8Z GENERAL DESCRIPTION 5 WATTS - 8 VOLTS 400*512 MHz
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This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988.
AR346.
AN1107.
This article
vmil120ft
acrian RF POWER TRANSISTOR
VMIL20FT
F2012 mosfet
acrian RF MOSFET
AR346
acrian RF MOSFET vmil40ft
VMIL40FT
n-channel enhancement mode vmos power fet
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transistor c3-12
Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312
Contextual Info: 0182998 ACRIAN INC ~T? j>F| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz
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C3-12
lc-50mA
100mA
Vcc-12
transistor c3-12
acrian RF POWER TRANSISTOR
C3-12-2
C312
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
Contextual Info: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.
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S250-50
S250-50-3
Icq-100
acrian RF POWER TRANSISTOR
acrian RF POWER TRANSISTOR 300 w
TRANSISTOR S250
acrian ic
S250-50-2
S250-50-3
S25-50
le200
acrian inc
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8Z-2
Contextual Info: 0182998 ACRIAN INC —^7 DE^OlAa^a rJm £ 5 * « S Æm H m ¡¡¡Si H P S r , H a ik W wSm mm w&à I DD013H3 t " J ^ D 1 " * 3 3 -07 TUPÍAN C2-8Z GENERAL DESCRIPTION This device is specifically designed for 8 Volt operation in VHF/UHF power amplifier applications covering
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DD013H3
8Z-2
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trw rf
Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W
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UMOB55
RZ2731B60W
RZ2833B60W
RZ3135B50W
OME25
OME30L
MKB12100W5
BAL0204
UMIL60
UMIL70
trw rf
ACRIAN
trw rf transistors
acrian inc
trw transistors
TRW MICROWAVE
acrian rf power
FUJITSU MICROWAVE
MRF648
TPM4130
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MP5W01A
Abstract: 2N6197 Motorola 2N6080 2N6207 2N6366 40327 1405 Motorola acrian inc 25C31 motorola tip29
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, Solid Stine Advned Semi Semi Inc NEC Corp JA NECElecslnc MitsubiElec MitsubiElec Solid Stlnc ToshibaCorp ToshibaCorp ~~g~:g~ ~atsusnlta I(C) 20 25 30 35 40 45 50 55 60 65 70 75 80 85 - 90 >= Ie Max
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2S0356
2S0415
2S0357
2S0358
S1732
2SC3425
MP5W01A
2N6197
Motorola 2N6080
2N6207
2N6366
40327
1405 Motorola
acrian inc
25C31
motorola tip29
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D1192
Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
Contextual Info: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect
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OT7A02
OT7B01
OT7602
2N3919
2N3715
PTC116
2S03690
2N5622
D1192
2SC3593
BOT93
diode GG 71
RCA1C07
acrian inc
diode 2U 66
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BF460
Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~:
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2SC24
2SC1567
2SC1567A
BLY11
2N3498
2N3499
MM2258
BF460
BLY34
2n5213
2N3869
BLY33
motorola diode
2N3374
BF461
diode GG 14
G9090
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SKC25B70
Abstract: PT9847 TIP350 B0249 ESM752A ESM952A TlP35C esm952 PT9785 2n6686 to218
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822
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TC15-1000
TC15U1000
2SC2904
S01540-3
S01540-8
S01541-1
PT8854
PT8854A
PT8865
SGSF662
SKC25B70
PT9847
TIP350
B0249
ESM752A
ESM952A
TlP35C
esm952
PT9785
2n6686 to218
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GROUND BASED RADAR
Abstract: AIRBORNE DME vimostm
Contextual Info: Thermal Characteristics & Considerations VIMOS Product Portfolio VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a useful reference to aid in thermal considerations and calculations, applied to the VIMOSTM portfolio of RF power transistors. Rather
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1214-1400MHz
200uS
GROUND BASED RADAR
AIRBORNE DME
vimostm
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TI494
Abstract: THP47 TF80 siemens TE3904 TI381 TIP-24 TF260 TI389 TI-494 TH415
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822
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TC15-1000
TC15U1000
2SC2904
S01540-3
S01540-8
S01541-1
PT8854
PT8854A
PT8865
SGSF662
TI494
THP47
TF80 siemens
TE3904
TI381
TIP-24
TF260
TI389
TI-494
TH415
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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