2N3684 Search Results

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

n-channel fet to-92

Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685

2N3686

Abstract: 2N3685 2N3687 2N3686 equivalent 2N3954A 2n3684 dual 2N3684 equivalent siliconix 2N3685 2N3684-7 2N3955A
Contextual Info: 2N 3687 2N3686 2N3685 2N3684 n-channel JFETs S . designed fo r S ilic o n ix Performance Curves NFA See Section 5 BENEFITS • Low Noise Am plifiers • Operates from High Supply Voltages BV q s S > 50 V ■ Choppers ■ Switches TO-72 See Section 7 * ABSOLUTE M AXIM UM RATINGS 25° C

2N3684

Abstract: 2N3687 0DG02 2N3686 2N3685 X2N3684 X2N3685 X2N3686 X2N3687 12VDS
Contextual Info: 2N3684 - 2N3687 CA L O G I C CORP MAE D • 1044322 0DG02Ö7 3 B C 6 C N-ChannelJFET Low Noise Amplifier CORPORATION T -t 2N3684- 2N3687 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • Low Noise • High Input Im pedance • Low Capacitance

2N3685

Abstract: 2N3684 2N3686 2N3687 X2N3684 X2N3685 X2N3686 X2N3687 TO72 package n-channel jfet
Contextual Info: 2N3684 - 2N3687 CALOGI C CORP 4âE D • 1344322 N-ChannelJFET Low Noise Amplifier DGG02Ö7 3 MCGC CORPORATION T-VÌ-Z.S 2N3684-2N3687 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • Low Noise • High Input Im pedance • Low Capacitance

2N3684 equivalent

Abstract: 2N3687 2N3684 2N3686 6BW6 2N3686 equivalent 2N3685
Contextual Info: 2N 3687 2N3686 2N3685 2N3684 n-channel JFETs S . designed fo r Siliconix Performance Curves NFA See Section 5 BENEFITS • Low Noise Am plifiers • Operates from High Supply Voltages BV q s S > 50 V ■ Choppers ■ Switches TO -72 See Section 7 * ABSOLUTE M AXIM UM RATINGS 25° C

BF460

Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~:

MMBFJ202

Abstract: MBF5459 bf245b PN4303 MMBFJ201
Contextual Info: bflE ]> • JF E T General Purpose continued H h501130 0 0 3 ^ 6 NATL SEMICOND bTO * N S C S (DISCRETE) N Channel Vp % I b Device BVoss (V) M in (V) M in M ax m (mmho) CIss Crss (PF) (PF) M ax M ax M in M ax en @ F re q Package M ax (Hz) 2N3684 50 2 5

Contextual Info: ^TT^[L L O W P O W E R F IE L D EFFEC T T R A N S IS T O R S L@W M@0©i Type Number C ase Style ( T O - Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) Yos Max (uMhos) 2N3684

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3954A

Abstract: 2N3954 SiC JFET 2N3956-8 2N3955A 2N3684-7 2N3684CHP-7CHP 2N3955CHP 2N3956CHP-8CHP 2N3965
Contextual Info: n-channel JFET H designed fo r . . . • ■ S ilic o n ix Low and M edium Frequency Single B E N E F IT S : and Differential Am plifiers • Wide D yn am ic Range • Low Capacitance Ciss < 4 p F • Low O u tpu t Conductance High Input Impedance Am plifiers

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk

2N3684

Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
Contextual Info: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0

Contextual Info: /A Y /A L© N-CHANNEL JUNCTION FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS 016" 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

2N6421

Contextual Info: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators, converters,

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2sk30a

Abstract: 2N3066A 2NS047 2SK523-L j200 2SK30AY 2SK30ATM 2ns04 2sk68 2SK30A-R
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer gt. V BR GSS loss (V) (A) Min (S) Max 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.0m 4.Sm 4.Sm 4.Sm 4.Sm 4.Sm S.Om 5.0m S.Om S.Om S.Om S.Om S.Om S.Om S.Om S.Om S.Om S.Om S.Om S.Om S.Om

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types