AD 152 TRANSISTOR Search Results

LOGIC 4583

Abstract: FR20 FR21 FR22 M34583EDFP M34583MD-XXXFP
Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4583 Group REJ03B0009-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Interrupt . 7 sources

HXTR-3685

Abstract: HXTR-3686 HXTR3685 HXTR 3685
Contextual Info: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package

AT41400

Abstract: ad 156 transistor maximum gain 33 at 2.0 ghz
Contextual Info: m H EW LETT PACKARD AT-f 1400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Features • • • Chip Outline Low NoiseFigure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High AssociatedGain: 14.5 dB typical at 2.0 GHz 10.5 dB typical at 4.0 GHz

IR LFN

Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

SD1019

Abstract: TEA 1019 M130
Contextual Info: H M S 'n m rtìr^ f- * r t I f l / C f S f ¡ I P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1019 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSISTOR FREQUENCY

BLX14

Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
Contextual Info: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)

p87 transistor

Contextual Info: ELECTRICAL CHARACTERISTICS 5.1 Electrical Characteristics 5.1 E lectrical C h aracteristics 5.1.1 A bsolute maxim um ratings Absolute Maximum Ratings Symbol Vcc Parameter Supply voltage Input voltage Vi Vi Vi Input voltage Input voltage Output voltage Conditions

TLP127F

Contextual Info: TLP127 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA MINT FLAT COUPLER TLP127 is a nmnll outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting

HVR3509

Abstract: kbp 3510 DF101 3505G P6KE 6CA GENERAL SEMICONDUCTOR CK 6CA SMd 6CA smd diodes ke 48 model PB201M smd 8ca
Contextual Info: iiA irr PRODUCT PACKAGING SPECIFICATIONS AMMOPAK PACKAGING FOR TRANSISTORS TO-92 PLASTIC CASE Carrier tape Specification of carrier tape T h e c a rrie r tap e c o n s is ts of a c a r d ­ b oard strip with s p ro c k e t holes. The p ins of th e tr a n s is to rs are s e c u re d

transistor 2222a

Abstract: pm 2222a 3316 TRANSISTOR
Contextual Info: Thp m LriM I H E W LE T T P ack ard 4.8 VNPN Silicon Bipolar Common Emitter Transistor Ifechnical Data A T-38086 F eatures • 4.8 Volt Pulsed pulse width = 577 jisec, duty cycle = 12.5% /CW Operation • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CWPout

internal circuit of UM3561

Abstract: Siren Sound Generator circuit diagram UM3561 um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561
Contextual Info: UNICORN MICROELECTRONICS E4E » • ia7fl?fiö 0001543 1 ■ T - 17^13 U M 3561 Three Siren Sound Generator Features ■ A magnetic speaker can be driven by connecting an ■ Four sounds can be selected NPN transistor ■ Typical 3V operating voltage ■ Power on reset

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N1174

Abstract: 2N1179 2N1113 transistor marking WY ske 250A
Contextual Info: ● MIL-s-19500/215 NAVV 9 November 1961 ~fTARY TRANSISTOR, 1. SPECIFICATION ‘IYPES 2N1179 ANo SCOPE 1.1 ~ - Tht8 specification covers PNP type 2N1 174 transistors, tie general 19500, unie.m otherwise specified herein. the detail requirements for germankm,

RT150B

Abstract: THP47 transistor TF78 2N2467 2SB331 AC117 AC178 AD164 xc121 TF78/30
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

LP1001

Abstract: LP1001A
Contextual Info: MOTOROLA Order this document by LP1001/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors LP1001 LP1001A The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small–signal plastic transistors offers superior quality

AN569

Abstract: MTP40N10E ad 152 transistor
Contextual Info: MOTOROLA Order this document by MTP40N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTP40N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0.04 OHM This advanced TMOS E–FET is designed to withstand high

capacitor 0,1 mF 50V

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Contextual Info: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization

G200

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization

KP 2010

Abstract: M38039G8H-XXXHP
Contextual Info: 3803H Group QzROM version Standard Characteristics Standard Characteristics Example Standard characteristics described below are just examples of the 3803H Group(QzROM version)'s characteristics and are not guaranteed.

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and

OKI EM-318

Contextual Info: 12R & 13R & 98R .D S Page 1 M onday, August 5, 1996 3:08 PM Oki Semiconductor_ MSM12R0000/MSM13R0000/MSM98R000 0.5|.im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.5|^m ASIC products, specially designed for m ixed 3-V /5-V applications, are now available in both

SSC 9500 ic data

Abstract: SSC 9500 MOTOROLA SCR driver ic tft ssc 9500 D117 TRANSISTOR BJ 131 D116 D118 D119 D120
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Source Column Driver for TFT Type LCD Panel MC141524 CMOS The MC141524 is a high voltage LCD source driver. It is a low power silicongate CMOS LCD driver chip which consists of 120 channels source drive to provide the drain bus signal of a TFT (Thin-Film-Transistor) LCD panel.

KA317LZ

Contextual Info: KA317L ADJUSTABLE VOLTAGE REGULATOR POSITIVE 3-TERMINAL 0.1A POSITIVE ADJUSTABLE REGULATOR The KA317L is a 3-terminai adjustable positive voltage raguiatof capable of supplying in exca*»of100mA over an out­ put voltage ranoe of 1 ,2Vto 37V. This voltage regulator is ex­

TIC 136 Transistor

Abstract: 2.22 pf trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF4427R2 D e s ig n e d fo r a m p lifie r, fre q u e n c y m u ltip lie r, o r o s c illa to r a p p lic a tio n s in in d u stria l e q u ip m e n t co n s tru c te d w ith su rfa c e m o u n t c o m p o n e n ts . S u ita b le fo r