AFR, TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781K*LT1 3 COLLECTOR 1 3 BASE 2 EMITTER 1 2 SOT– 23 FAbsolute maximum ratings Ta = 25_C FDEVICE MARKING L2SD1781KRLT1=AFR L2SD1781KQLT1=AFQ FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G

transistor AFR

Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G
Contextual Info: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G

0440

Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1

Contextual Info: &5* 435 3%-)#/.$5#4/2 #/.42/,%2 -!.5!, #-  % &-# , &!-),9 -)#2/#/.42/,%23 -"! 3%2)%3 !2$7!2% -!.5!, /RDERING .UMBER 4- ! 4ABLE OF #ONTENTS  '%.%2!,  &EATURES                                                            

2N326

Abstract: afr 05 NPN Germanium
Contextual Info: MI L.s-19500/40 AMENDMENT 1 14 June 1988 I MILITARY SEMICONDUCTOR SPECIFICATION OEVICE, TRANSISTOR, PO’JER TYPE 2N326 NPN GERMANIuM, This amendment forms a part of MI L.s-19500/40B dated 26 February 1968, and is approved for use by all Departments and Agencies

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05

marking AFR

Contextual Info: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 FStructure Epitaxial planar type

2SD1781K

Abstract: transistor afr Transistor marking 0.5
Contextual Info: 2SD1781K SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY TRANSISTOR * Feature: NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) (2) High current capacity in compact package

2SD1781K

Abstract: afr 05 transistor afr
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD1781K SOT-23-3L TRANSISTOR NPN FEATURES z Low voltage z High saturation current capability 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor afr

Abstract: AFR marking 2SD1781K afr 05 transistor afr 60
Contextual Info: 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM℃ 2. 80¡ À0. 05 2. 92¡ À0. 05 200 0. 95¡ À0. 025 PCM: Collector-base voltage

Contextual Info: 2SD1781K NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 Features: *Very Low VCE(sat) V CE(sat) < 0.4 V (Typ.) (I C / IB = 500mA / 50mA) *High Current Capacity in Compact Package. *Complements The 2SB1197 *We Declare That The Material of Product Compliance With RoHS Requirements.

2SD1781

Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
Contextual Info: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197

marking AFQ

Abstract: 2SB1197K 2SD1781K transistor afr
Contextual Info: 2SD1781K NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K

NB b6 smd transistor

Abstract: smd diode S6 6D Diode smd f6 SMD TRANSISTOR MARKING by 9f smd diode JC 9E SMD TRANSISTOR MARKING 9f TRANSISTOR SMD MARKING CODE B7 transistor afr 22 TRANSISTOR SMD MARKING CODE 1d TRANSISTOR SMD MARKING CODE 2.T
Contextual Info: ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C263 / SDA 30C264 Data Sheet 1996-06-01 SDA 30C263 / SDA 30C264 Revision History: Current Version: 1996-06-01 Previous Version: Page Page in previous (in new Version Version) Subjects (major changes since last revision)

transistor smd afr 22

Abstract: siemens sda 30c164 transistor smd bc rn TRANSISTOR SMD MARKING CODE B7 30C163 SMD Transistor AFR Siemens sda 5250 c4 marking code CB SMD ic a18 NB b6 smd transistor TRANSISTOR BC 187
Contextual Info: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C263 / SDA 30C264 Datasheet 1996-06-01 SDA 30C263 / SDA 30C264 Revision History: Current Version: 1996-06-01 Previous Version: Page in previous Version Page (in new Version) Subjects (major changes since last revision)

Contextual Info: h 7 > y X $ / T ransistors 2SD 1781K 2SD1781K X tf £ * > T V 7° L - ;u K = NPN ' > u p > h 7 > y X $ 4 ,H 2]*rilll«ffl/Mediiim Power Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor • £tff2\fi£|3]/D im ensions U n it: mm) 1) V c E l s a t l t f ' ^ t C - f i l ' c

Contextual Info: 32E D • Ö23b32ü 0017251 3 ■ SIP NPN Silicon Transistors SMBT 6428 SMBT 6429 17 SIEMENS/ SPCL-. SEMICONDS • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering code for

STA451C

Abstract: STA441C SL 100 NPN Transistor base emitter collector STA341M all transistor STA342M STA431A sanken sta341m sta400a transistor afr
Contextual Info: E LECTi!I5 c.° LT1> 35E m P 7^0741 000074^ 5 EESAKJ T 4 3 - Z 5 STA431A/STA451C/STA453C NPN Silicon Triple-Diffused Mesa Type Transistor E/G PNP Silicon Epitaxial Planar Type Features ^Equivalent Circuits • •C om plem entary Pair Low Saturation Voltage