L2SD1781KQLT1G Search Results

L2SD1781KQLT1G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L2SD1781KQLT1G		Leshan Radio Company	Medium Power Transistor(32V, 0.8A)		Original	PDF

L2SD1781KQLT1G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	PDF	L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G
0440 Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	PDF	L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G 0440 L2SD1781KRLT1G marking AFR AFR marking transistor afr
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	PDF	L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	PDF	L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1	Original	PDF	L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1	Original	PDF	L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G
transistor AFR Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781KLT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KLT1 4) Pb Free Package is Available.	Original	PDF	L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2SD1781KQLT1G L2SD1781KRLT1 L2SD1781KRLT1G transistor AFR AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking transistor 1039 L2SD1781KQLT1