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    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X

    AGR045010

    Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
    Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB

    ATC100B101JW500X

    Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to


    Original     		PDF AGRA10XM AGRA10 IS-95 withstan09-9138 DS04-257RFPP DS04-202RFPP) ATC100B101JW500X 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    MOSFET J162

    Abstract: j162 MOSFET J147
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147

    0203S

    Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
    Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147

    ATC100B101JW500X

    Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
    Text: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power


    Original     		PDF AGRA10GM AGRA10 IS-95 pro9138 DS04-293RFPP DS04-257RFPP) ATC100B101JW500X ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853

    TRANSISTOR J477

    Abstract: krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1
    Text: Preliminary Data Sheet April 2003 AGR21010E 10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular, personal communications system (PCS), digital communication system (DCS), and


    Original     		PDF AGR21010E AGR21010E AGR21010EU DS03-038RFPP DS02-381RFPP) TRANSISTOR J477 krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1

    MOSFET J162

    Abstract: J473 MOSFET J147
    Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147

    140-A525-SMD

    Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
    Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa

    Z9 TRANSISTOR SMD

    Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
    Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR18060E AGR18060E AGR18060EU AGR18060EF DS02-325RFPP

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180E AGR21180EU AGR21180EF DS02-275RFPP TH 2190 HOT Transistor

    "RF Power Amplifier"

    Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
    Text: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF DS04-156RFPP DS04-032RFPP) "RF Power Amplifier" 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X

    J307 FET

    Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
    Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al

    100B120JW500X

    Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
    Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-068RFPP DS04-064RFPP) 100B120JW500X grm40x7r103k100al 100B470JW500X 100B100JW500X

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090EU AGR19090EF DS01-117RFPP

    transistor 7350

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
    Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    AGR26180EF

    Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent

    AGR09085EF

    Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
    Text: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 AGR09085E DS04-152RFPP DS04-055RFPP) AGR09085EF AGR09085EU JESD22-C101A j122 mosfet