AGR19090EU Search Results

AGR19090EU Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
AGR19090EU		Agere Systems	MOSFET		Original	PDF	23.92KB	2
AGR19090EU		Agere Systems	90 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF	175.3KB	11

AGR19090EU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Data Sheet November 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090EU AGR19090EF Dissipation10-12, DS04-034RFPP DS01-117RFPP)	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090 Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090	PDF
Contextual Info: Preliminary Product Brief April 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090EU AGR19090EF PB03-094RFPP PB03-068RFPP)	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E DS04-160RFPP DS04-079RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF
Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990	PDF
Contextual Info: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090EU AGR19090EF DS01-117RFPP	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A Contextual Info: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E DS04-079RFPP DS04-034RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A	PDF
transistor A114 Abstract: transistor C101 AGR19090E AGR19090EF AGR19090EU JESD22-A114 Contextual Info: Preliminary Product Brief May 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF IS-95 PB03-113RFPP PB03-094RFPP) transistor A114 transistor C101 AGR19090EF JESD22-A114	PDF