AGR19045E Search Results

AGR19045E Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AGR19045E		TriQuint Semiconductor	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	Original	PDF	314.65KB	10
AGR19045EF		Agere Systems	45 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor	Original	PDF	175.11KB	11
AGR19045EF		Agere Systems	FET Transistor, 45W, 1930MHz-1990MHz, N-Channel E-Mode, Lateral MOSFET Transistor	Original	PDF	511.95KB	10
AGR19045EF		TriQuint Semiconductor	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	Original	PDF	314.66KB	10
AGR19045EU		Agere Systems	FET Transistor, 45W, 1930MHz-1990MHz, N-Channel E-Mode, Lateral MOSFET Transistor	Original	PDF	511.95KB	10

AGR19045E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AGR19045XF Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045EF Hz--1990 AGR19045XF	PDF
6603 Shenzhen Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor	PDF
CDM 03 Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A Contextual Info: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19045EF Hz--1990 AGR19045EF carGR19045EF AGR19045XF 21045F 12-digit CDM 03 AGR19045XF CDR33BX104AKWS JESD22-C101A	PDF
j306 TRANSISTOR equivalent Abstract: transistor J306 zl 04 FET j306 Contextual Info: Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045E Hz--1990 AGR19045EU AGR19045EF DS02-378RFPP j306 TRANSISTOR equivalent transistor J306 zl 04 FET j306	PDF
j306 TRANSISTOR equivalent Abstract: transistor J306 AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L Contextual Info: Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045E Hz--1990 AGR19045E AGR19045EU AGR19045EF DS02-378RFPP j306 TRANSISTOR equivalent transistor J306 AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L	PDF
Contextual Info: Product Brief August 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045E Hz--1990 AGR19045EU AGR19045EF PB03-173RFPP	PDF
J600 transistor Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045EF Hz--1990 DS04-240RFPP DS04-077RFPP) J600 transistor	PDF
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125	PDF
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF