AGR21030EU Search Results

AGR21030EU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AGR21030EU		Agere Systems	FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET	Original	PDF	323.97KB	10

AGR21030EU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Contextual Info: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157	PDF
Contextual Info: Preliminary Product Brief April 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030EU AGR21030EF PB03-095RFPP PB03-070RFPP)	PDF
J605 Contextual Info: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605	PDF
2.4 ghz mosfet Contextual Info: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030EU AGR21030EF Juncti10-12, DS04-036RFPP 2.4 ghz mosfet	PDF
AGR21030E Abstract: AGR21030EF AGR21030EU JESD22-C101A Contextual Info: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030E AGR21030EU AGR21030EF performance-12, DS04-200RFPP DS04-163RFPP) AGR21030EF AGR21030EU JESD22-C101A	PDF
AGR21030E Abstract: AGR21030EF AGR21030EU JESD22-A114 Contextual Info: Preliminary Data Sheet May 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030E AGR21030EU AGR21030EF carr10-712-4106) DS02-277RFPP AGR21030EF AGR21030EU JESD22-A114	PDF