AI MM SOT 25 Search Results

TM 1812

Contextual Info: PCB for Soldering Practice for SMD Standard, Fine Pitch and Discrete Components DS = doppelseitig / double-sided / double face / de dos cara s Roth Elektronik GmbH 55595 Roxheim Hauptstrasse 93 Germany phone +49 0 671 31872 fax +49 (0) 671 30496 1210 aaaaaaasaa

S0T143

Abstract: QFP184 BQFP132 MELF SMD PLCC20 QFP52 SOL20 sol-20
Contextual Info: Roth Elektronik GmbH 55595 Roxheim Hauptstrasse 93 Germany phone +49 0 671 31872 fax +49 (0) 671 30496 PCB for Soldering Practice for SMD Standard, Fine Pitch and Discrete Components ROTH ELEKTRONIK Challenger % SMD Lab J ,!!!m!!L D-55595 ROXHEIM Germany

sot267

Contextual Info: Philips Semiconductors Package information Package outlines INDEX VERSION DESCRIPTION NAME PAGE DIP dual in-line package DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 ; SOT97 593 DIP16 plastic dual in-line package; 16 leads (300 mil); long body

BC557 sot-23

Abstract: 3f SOT-23 BC557 sot package sot-23 transistor BC559 3F SOT23-3 BC856 BC856A BC856ALT1 BC857 BC857B
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO

8550 sot-23

Contextual Info: T em ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Reverse voltage

Contextual Info: INTEGRATED CIRCUITS 74ABT623 Octal transceiver with dual enable, non-inverting; 3-State Product specification Supersedes data of 1996 Sep 25 IC23 Data Handbook Philips Semiconductors 1998 Jan 16 PHILIPS Philips Semiconductors Product specification Octal transceiver with dual enable, non-inverting

Contextual Info: Philips Semiconductors Product specification Dual 4-input NAND gate 74ABT20 QUICK REFERENCE DATA SYMBOL PARAMETER Propagation delay An, Bn, Cn, Dn to Yn tpLH tpHL LOGIC DIAGRAM CONDITIONS Tamb = 25°C; GND = OV TYPICAL Cl = 50pF; VCC = 5V 5 Ï CO CO «9*9

2646 TRANSISTOR

Abstract: BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • ÔREOORb DDO'îSD'i b • BU 908 TTIiUIiFttiïiKiiK! electronic CrMlrve Tschnotogtes Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time

74ABT

Abstract: 74ABT02 74ABT02D 74ABT02PW
Contextual Info: Philips Semiconductors Product specification Quad 2-input NOR gate 74ABT02 QUICK REFERENCE DATA SYMBOL PARAMETER LOGIC DIAGRAM CONDITIONS Tamb - 25°C; GND = 0V TYPICAL i> T> AO BO UNIT A1 B1 tpLH tpHL Propagation delay An or Bn to Yn tOSLH tOSHL Output to

74ABT

Abstract: 74ABT02 74ABT02D 74ABT02PW diode B34
Contextual Info: Philips Semiconductors Product specification Quad 2-input NOR gate 74ABT02 QUICK REFERENCE DATA SYMBOL PARAMETER LOGIC DIAGRAM CONDITIONS Tamb - 25°C; GND = 0V TYPICAL AO BO UNIT i> T> A1 B1 tpLH tpHL Propagation delay An or Bn to Yn tOSLH tOSHL Output to

Contextual Info: Philips Semiconductors Product specification Quad 2-input NAND gate 74ABT00 QUICK REFERENCE DATA SYMBOL CONDITIONS Tamb “ 25°C; GND = 0V PARAMETER Propagation delay An or Bn to Yn tpLH tpHL LOGIC DIAGRAM TYPICAL 2.5 2.0 CL = 50pF; VCC = 5V UNIT AO BO A1

74ABT00

Abstract: 74ABT00D 74ABT00N 74ABT00PW
Contextual Info: Philips Sem iconductors Product specification Quad 2-input NAND gate 74ABT00 QUICK REFERENCE DATA SYMBOL LOGIC DIAGRAM CONDITIONS Tamb ~ 25°C; GND = 0V PARAMETER TYPICAL UNIT 2.5 2.0 ns 0.4 ns tpLH tpHL Propagation delay An or Bn to Yn toSLH tOSHL Output to

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

marking code SE transistors

Contextual Info: TELEFUNKEN ELECTRONIC 17E » • fl'ÌEDQRb DQÌHS27 è BUT 56 • BUT 56 A mJMFWKIM electronic Crttttv«Ifcfwioiog* T*- 3 3 -Ì2 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

SFN203B

Abstract: T-39 sfn203
Contextual Info: 8368602 SOLITRON DEVICES S F N 2 0 3 B INC 70C 02036 S W I T C H PACKAGE TO-3 M O S 0 ^ 70 T-39-11 ° ° ° s D3t ^ a f POWER MOS MAXIMUM RATINGS VDS *D XDM V GS PD XL TJ oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source Drain Current, Continuous @ T =25°C

cd 1691 cp

Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz

Contextual Info: Philips Semiconductors Product specification Quad 2-input OR gate 74ABT32 QUICK REFERENCE DATA SYMBOL LOGIC DIAGRAM CONDITIONS lamb = 25°C; GND = 0V PARAMETER TYPICAL UNIT BO tpLH lPHL Propagation delay An, Bn to Yn *OSLH k SHL Output to Output skew C|N Input

T4AS

Contextual Info: Tem ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Unit Reverse voltage

SFN353A

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES S F N 3 5 3 A INC 7 °C 0 2 0 7 4 S W I T C H PACKAGE TO -3 D ^ T-39-13 M O S ^ doobg ?* a POWER MOS MAXIMUM RATINGS VDS JD IDM VGS PD *L TJ oper T stg UNITS PARAMETER SYMBOL V Voltage, Drain to Source 350 Drain Current, Continuous @ T *25°C

sfns101

Contextual Info: SOL ITR ON DEVICE S INC 70 ¿ F | fl3bBbOE 0 0 0 1 ^ 5 3 7"* 3 r - 2 ^ SWITCH MOS SFNS101A POWER MOS PACKAG E TO-52 MA XI MU M RATINGS VDS rD IDM VGS PD IL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 100 Drain Current, Continuous @ Tc*25°C

sfnf322

Contextual Info: 8368 6 0 2 70 SOLITRON DEVICES DE|a3bôb05 000SDS7 70C INC fl r 02057 T-39-09 SWITCH MOS SFNF322 POWER MOS PACKAGE TÛ-39 MAXIMUM RATINGS UNITS PARAMETER SYMBOL Voltage, Drain to Source VDS A Drain Current, Continuous @ T *25°C ’ c Drain Current, Pulsed

Contextual Info: Philips Semiconductors Product specification Quad 2-input AND gate 74ABT08 QUICK REFERENCE DATA SYMBOL PARAMETER tpLH tpHL Propagation delay An or Bn to Yn LOGIC DIAGRAM CONDITIONS Tamb = 25°C; GND = 0V TYRCAL 2.4 1.9 CL = 50pF; VCC = 5V UNIT A1 B1 4 5 10

smd code marking LF sot23

Abstract: smd diode marking A3 sot23
Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes BAS40 series PINNING SOT23 (see Fig. 1a) FEATURES • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig. 1b) BAS40-04 (see Fig. 1c) BAS40-05 (see Fig. 1d)

5B1 SOT-23

Abstract: MARKING CODE 5B1 5B1 SOT23-3 BC807-40LT1 AI mm sot 25 SOT-23 Package onsemi BC807
Contextual Info: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage