AI09 Search Results

VCO 5GHz

Abstract: AN0017 ic vco
Contextual Info: AI0910 May 2009 Advanced Information QFN packaged 7.5GHz Integrated VCO GaAs Monolithic Microwave IC VCO’s represents a key component for the Telecommunication ODU system. UMS decided to address this very specific function, based on our strong and successful

SMD ic catalogue

Abstract: AN0017 QFN-5x5
Contextual Info: AI0912 May 2009 Advanced Information QFN packaged 8.4GHz Integrated VCO GaAs Monolithic Microwave IC VCO’s represents a key component for the Telecommunication ODU system. UMS decided to address this very specific function, based on our strong and successful

AN0017

Abstract: ODU microwave
Contextual Info: AI0911 May 2009 Advanced Information QFN packaged 8.0GHz Integrated VCO GaAs Monolithic Microwave IC VCO’s represents a key component for the Telecommunication ODU system. UMS decided to address this very specific function, based on our strong and successful

Contextual Info: M41T81S Serial access real-time clock RTC with alarms Datasheet − production data Features • ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century 32 KHz crystal oscillator with integrated load capacitance (12.5 pf) which provides

JESD22-A114A

Abstract: M34F04
Contextual Info: M34F04 4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory PRELIMINARY DATA FEATURES SUMMARY 2 • Two Wire I C Serial Interface Supports 400 kHz Protocol ■ 2.5 to 5.5V Single Supply Voltage: ■ Hardware Write Control of the top half of

STM706P

Abstract: STM706R
Contextual Info: STM706T/S/R, STM706P, STM708T/S/R 3 V supervisor Features • Precision VCC monitor – STM706/708 T: 3.00 V ≤ VRST ≤ 3.15 V S: 2.88 V ≤ VRST ≤ 3.00 V R: STM706P: 2.59 V ≤ VRST ≤ 2.70 V RST and RST outputs ■ 200 ms typ trec ■ Watchdog timer - 1.6 s (typ)

LT1187

Abstract: LT1187C LT1187CN8 LT1187M LT1189 LT1193
Contextual Info: LT1187 Low Power Video Difference Amplifier FEATURES DESCRIPTION • The LT 1187 is a difference amplifier optimized for operation on ±5V, or a single 5V supply and gain ≥2. This versatile amplifier features uncommitted high input impedance + and (–) inputs, and can be used in differential

LT1091

Abstract: 8255 interface with 8051 MC68HC05 Applications Guide LTC1091 LTC1091ACN8 LTC1091CN8 8051 Interfacing with the 8255 interfacing 8255 to external memory in 8051 with 8255 peripheral interface 8051 "YSI 700" thermistor
Contextual Info: LTC1091/LTC1092 LTC1093/LTC1094 1-, 2-, 6- and 8-Channel, 10-Bit Serial I/O Data Acquisition Systems FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Programmable Features – Unipolar/Bipolar Conversions – Differential/Single-Ended Multiplexer Configurations

radix-8 FFT

Abstract: yswa BR17 CI23 radix DSP24 24PORTB DR17 64 point radix 4 FFT dsp24s
Contextual Info: DSP Architectures Transform Your World DSP24 TM High Performance Scalable DSP Chip DSP Architectures Data Sheet Real 24 PORT A Imag 24 DSP24 Imag 24 24 24 X I NP U TB US Y INPUT BU S OUTPU TB US 24 48 Imag 24 Scheduler/ Controller X Y Memory A 24 Memory B

STMicroelectronics NAND256W3A

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

sn1204

Abstract: L1204 1204 video rgb splitter amplifier schematic 1204 transistor HP4195A LT1204 LT1204CN LT1204CS LT1204CSW
Contextual Info: LT1204 4-Input Video Multiplexer with 75MHz Current Feedback Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1dB Gain Flatness > 30MHz Channel Separation at 10MHz: 90dB 40mV Switching Transient, Input Referred – 3dB Bandwidth, AV = 2, RL = 150Ω: 75MHz

BCR10

Abstract: M69KM096AA
Contextual Info: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus

Contextual Info: PSD8XXFX Flash in-system programmable ISP peripherals for 8-bit MCUs, 5 V Features • Flash in-system programmable (ISP) peripheral for 8-bit MCUs ■ Dual bank Flash memories – Up to 2 Mbit of primary Flash memory (8 uniform sectors, 32K x8) – Up to 256 Kbit secondary Flash memory (4

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: SRI512 13.56-MHz short-range Contactless memory chip with 512-bit EEPROM and Anti-Collision functions Preliminary Data Feature summary • ISO 14443 - 2 Type B Air Interface Compliant ■ ISO 14443 - 3 Type B Frame Format Compliant ■ 13.56MHz Carrier Frequency

FB300

Abstract: M50FW080 PLCC32 TSOP32
Contextual Info: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

CR10

Abstract: M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program

NAND02GW3B2C

Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

M34E02

Abstract: MLP8 2x3mm
Contextual Info: M34E02 2 Kbit Serial I²C Bus EEPROM with permanent and reversible, software Write protection Feature summary • Permanent and Reversible Software Data Protection for Lower 128 Bytes ■ Two Wire I²C Serial Interface ■ 400kHz Transfer Rate ■ Very Low Voltage Operation:

ISO10373-6

Abstract: SRT512 ISO14443-2 MI b11 transistor A4t 46 diode a4t transistor A4t ISO14443 ISO14443-3 7816-6 AM1
Contextual Info: SRT512 13.56 MHz short-range Contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B Air Interface compliant ■ ISO 14443-3 Type B Frame Format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency

JESD97

Abstract: M29W008EB M29W008ET M29W00EB
Contextual Info: M29W008ET M29W008EB 8 Mbit 1Mb x 8, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ACCESS TIMES: 70ns, 90ns ■ PROGRAMMING TIME: 10µs per Byte typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Embedded Byte Program Algorithm – Status Register bits and Ready/Busy

M50FLW080

Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
Contextual Info: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)