WSOP48 Search Results

STMicroelectronics NAND256W3A

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

Contextual Info: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary

C4858

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

reset nand flash HYNIX

Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
Contextual Info: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for

Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary

WSOP48

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

NAND01G-A

Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

Samsung k9f1208u

Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Contextual Info: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.

hynix nand

Abstract: HY27U HY27S 561M-TP
Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft JULY.10.2003 Preliminary

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

toshiba nand tc58

Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
Contextual Info: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

fbga63 package

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

WSOP48

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

st nand

Abstract: FBGA63
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

Contextual Info: HY27US 08/16 1G1M Series HY27SS(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.1 Defined Target Spec. Mar. 2004 Preliminary

HY27US08121

Contextual Info: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary

NAND FLASH BGA

Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

NS4159

Abstract: 528-byte
Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage

USOP48

Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

HY27USXX121M

Abstract: hynix nand PROGRAMMING reset nand flash HYNIX hynix 1g flash memory HY27US08121 HY27US16121M HY27SSXX121M
Contextual Info: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003

TFBGA55

Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

toshiba nand tc58

Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48
Contextual Info: AN1839 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device.