AL 108 TRANSISTOR Search Results

Contextual Info: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

c5353

Abstract: Z11A
Contextual Info: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY

BC109

Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

2SK2314

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2314 DATA SILICON N CHANNEL MOS TYPE L 2- tt - M O S V (2SK2314) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

UFN541

Abstract: ufn540 FN540 k96a UFN543 UFN542 FN541
Contextual Info: TH 0G10714 t UNITRODE CORP 9347963 UNITRODE 92D CORP POWER MOSFET TRANSISTORS 100 Volt, 0.085 Ohm N-Channel FEATURES • C o m p act Plastic Package • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second B reakdow n 10714 UFN540 UFN541

2SK2789

Contextual Info: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX.

ZO 109

Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

transistor itt 975

Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz

Contextual Info: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■

equalizer ic 5218

Abstract: mitsubishi 5218 M5226P Graphic Equalizer ic ic op 5218 5218 mitsubishi M5218 block diagram i3 processor Graphic equalizer circuit diagram graphic equalizer
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M5226P/FP 5-ELEMENT GRAPHIC EQUALIZER 1C DESCRIPTION The M 5 2 2 6 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp.

Tektronix 7603

Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
Contextual Info: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO

4C6 toroid

Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET

M5226

Abstract: mitsubishi 5218 ic m5226 ic op 5218 Graphic Equalizer ic equalizer ic 5218 M5218 5218 mitsubishi block diagram graphic equalizer 5218 a op amp
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M5226P/FP 5-ELEMENT GRAPHIC EQUALIZER IC DESCRIPTION The M 5 2 2 6 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp.

C67078-S1327-A3

Contextual Info: BUZ 72 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol

BUZ11A

Contextual Info: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

2SK2314

Abstract: 2-10P1B
Contextual Info: TO SHIBA 2SK2314 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2314 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE 10.3MAX. APPLICATIONS

tp9383

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TP9383 The RF Line V H F P o w e r T ra n sisto r • • • • • • 2 150 W — 108 MHz VHF POW ER TRANSISTOR . . . d e sign e d for use in the new generation of V H F -F M broadcast transm itters operating

118-136-MHz

Abstract: M113 SD1224-2 TRANSISTOR bu 406
Contextual Info: m m u IRRFProduçts^ F Products ^ m -• Microsemi P ro g re s s P o w e re d b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 18936-1013 Tel: 215 631-9840 o m 00/1 O O U l Z Z Q - Z RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Contextual Info: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 600 A 1 ms 1200 A O Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,057 °C/W 2200 W V ge 20 V Inversdiode

ic 741c operational amplifier

Abstract: ad520j
Contextual Info: G E N E R A L DESCRIPTION The A N A L O G DEVICES A D 108, A D 2 0 8 and A D 3 0 8 are precision operational am plifiers fabricated on a single silicon chip. The use o f super beta transistors in the in p u t stage, along w ith improved process co n tro l, results in guaranteed in p u t