BC178 Search Results

transistor bc 325

Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Contextual Info: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.

BC177 NPN transistor

Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
Contextual Info: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) ) 1 7 1 . ( ( 3

BC177, BC178, BC179

Abstract: BC179 BC178 BC118 BC177 BC111 BC7f tranzystor BC107 BC108
Contextual Info: 4 - 74/2 T R A N Z Y S T O R Y p-n-p * BC177, BC178 i BC179 SWW 1156-211 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy m alej czçstotliw osci. T ra n z y sto ry BC177 i BC178 p rzeznaczone do stosow an ia w p rz ed w z m ac n iac za ch m ale j czçsto tliw o sci i sto p n iac h ste ru j^ cy c h .

BC178

Contextual Info: BC178 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BC441-6

Abstract: bc303
Contextual Info: 6 133167 QOQDMMb T7A MAE D HI-REL SEM ELAB[ Type Number BC141-16 BC141-6 BC142 BC143 BC160 BC160-10 BC160-16 BC160-6 DC161 BC161-10 BC161-16 BC161-6 BC177 BC177A I3C177B BC178 BC178A BC178B BC178C BC179 BC179A BC179B BC179C BC300 BC300-4 DC300-5 BC300-6 BC301

Contextual Info: BC178 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

bc178

Abstract: BC177 pnp transistor BC178-BC179 BC177 NPN transistor datasheet BC177 BC179 transistor datasheet NPN BC178 Transistor BC177 BC107 characteristic DATASHEET Transistor BC109
Contextual Info: BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain

BC177, BC178, BC179

Abstract: 45X10 177b bc178b bc179
Contextual Info: 3QE » • 712*1237 UUJUorn o — -j / T T SGS TH O M S O N ^ 7 # [ * [ ^ m i O T r e s S 6 BC177 BC 178-B C 179 S -T H O M S O N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors In TO-18 metal case.They

Contextual Info: BC178 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BF479

Abstract: 2N5456 2SA1409-L KT361 2SB793 bsw21 LOW-POWER SILICON PNP 2SB1117L 2sb1117k BC357
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2SA719 2SA730 BC357 BC357 BC357 BSW73 KT3107G BC178 BC178A 2SA890 ~~~g~g 15 20 KT31 070 BC178B MPS6519 2SC2724 2SB766 2SB766A 2SB793 2SA1409L 2~A141UL 25 30 2SA1411 2SA1411 2SA1409K 2SA1410K KT361 A

2SA952L

Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E

BC108A

Abstract: bc109
Contextual Info: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0

LM358 microphone

Abstract: BC547 lm358 current limiter 1dz 2 BC178B Biopolar Transistor Chips NPN lm358 sum PBL3853 1N4148 BZ-115
Contextual Info: May 1996 PBL 3853 Universal Speech Circuit Description Key Features The PBL 3853 is a biopolar integrated speech circuit with specific parameters making it highly suitable to be used as a line interface and speech circuit in a telephone line powered electronic payphone. Emphasis has been put on low current consumption in

BC148

Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

N706A

Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
Contextual Info: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30

BC109

Abstract: BC107 BC103 BC108-BC109 BC108 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177
Contextual Info: T> 3QE m 7^ETS3? QQ3DÔSS S • ~ ^ F Vr,- - _ f= 7 S M ' S G G I S - T ^ © H O M S O - Z ° i N l L i © T f[R M a û S B C - [ 1 B C 1 0 7 1 0 8 - B C 1 0 9 “ S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

BC108 transistor

Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include: