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    AL SMD TRANSISTOR Search Results

    AL SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AL SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PI N CONFIGURATI ON NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor


    Original     		PDF BCX41 OT-23 BCX41 C-120 240310E ts 4141 TRANSISTOR smd

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON N PN 1 = BASE SOT-23 Formed SMD Package 2 = EMITTER 3 = COLLECTOR 3 For Lead Free Parts, Device Part #


    Original     		PDF BC846, BC847, BC848 OT-23 BC846 BC846A BC846B BC847 BC847A BC847B

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage


    Original     		PDF PZTA44 OT-223 C-120 PZTA44Rev140606E ts 4141 TRANSISTOR smd

    BCX53

    Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
    Text: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60


    Original     		PDF BCX51 BCX52 BCX53 BCX52 BCX51 BCX51-16 BCX53 marking AE smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52


    Original     		PDF BCX51 BCX52 BCX53 BCX51 BCX52 BCX51-16

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-55B TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Q101 compliant +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		PDF KUK7606-55B O-263 Tm175

    smd rgs

    Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
    Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		PDF KUK7607-55B O-263 smd rgs ld smd transistor smd 2U SMD Transistor nc KUK7607-55B

    ic 7446

    Abstract: IC 7446 A data sheet ic 7446 diode 7446 IC 7446 data sheet smd rgs KUK7607-30B 7446 ic 7446 data sheet ld smd transistor
    Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-30B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2


    Original     		PDF KUK7607-30B O-263 ic 7446 IC 7446 A data sheet ic 7446 diode 7446 IC 7446 data sheet smd rgs KUK7607-30B 7446 ic 7446 data sheet ld smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-75B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2


    Original     		PDF KUK7606-75B O-263

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40AIE TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54


    Original     		PDF KUK7105-40AIE O-263

    S739

    Abstract: F 739 DC smd 2U KUK7109-75AIE SMD DIODE 739
    Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Q101 compliant 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2


    Original     		PDF KUK7109-75AIE O-263 S739 F 739 DC smd 2U KUK7109-75AIE SMD DIODE 739

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54


    Original     		PDF KUK7105-40ATE O-263

    smd 2U 78 diode

    Abstract: smd 2U KUK7108-40AIE th362
    Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7108-40AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 ESD protection 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1


    Original     		PDF KUK7108-40AIE O-263 smd 2U 78 diode smd 2U KUK7108-40AIE th362

    KUK7107-55AIE

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2


    Original     		PDF KUK7107-55AIE O-263 KUK7107-55AIE

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54


    Original     		PDF KUK7109-75ATE O-263

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120

    marking al

    Abstract: 200a smd 2sA1766
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1766 -10mA -200mA -200A marking al 200a smd 2sA1766

    GD 743 Siemens

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on


    OCR Scan     		PDF TQ-220 BUZ103AL C67078-S1357-A2 A23SbOS Z103AL O-220 T05155 235b05 D0fl45flfl GD 743 Siemens

    1b smd transistor

    Abstract: 07A6 1b.1 smd transistor
    Text: Temic BUD700D S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode Very low switching losses • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation • HIGH SPEED technology


    OCR Scan     		PDF BUD700D BUD700D D-74025 18-Jul-97 1b smd transistor 07A6 1b.1 smd transistor

    6 pin TRANSISTOR SMD CODE PA

    Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
    Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF BUZ22SMD q67042-s4139 DsJ14 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD

    sot59

    Abstract: No abstract text available
    Text: Philips Sem iconductors Small-signal Transistors General M O U NTIN G AND SOLDERING Screen printing M ounting m ethods This is the best high-volum e production m ethod of solder paste application. An em ulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the


    OCR Scan     		PDF OT323. OT223. sot59

    13003 transistor SMD

    Abstract: transistor smd XH d13003 TD13002 13003 NPN Transistor features TD13003 al 13003 electronic ballast 13003 transistor al 13003 c s 13003 TRANSISTOR h
    Text: T e m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times


    OCR Scan     		PDF TD13002 TD13003 TD13002 TD13003-SM TD13003 13003 transistor SMD transistor smd XH d13003 13003 NPN Transistor features al 13003 electronic ballast 13003 transistor al 13003 c s 13003 TRANSISTOR h

    1b.1 smd transistor

    Abstract: transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2
    Text: Temic Som ii « h BUD616A d i h t i r s Silicon NPN High Voltage Switching Transistor Features • • • • • Simple-sWitch-Off Transistor (SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses • • • •


    OCR Scan     		PDF BUD616A BUD616A D-74025 18-Jul-97 1b.1 smd transistor transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2

    R Y SMD TRANSISTOR

    Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
    Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.


    OCR Scan     		PDF BLT13 OT96-1 MAM227 OT96-1. R Y SMD TRANSISTOR 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100