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    2SA1766 Search Results

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    2SA1766 Price and Stock

    Rochester Electronics LLC 2SA1766-D-TD-E

    BIP PNP 0.3A 25V
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    DigiKey 2SA1766-D-TD-E Bulk 2,219
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    Aptina Imaging 2SA1766-D-TD-E

    2SA1766-D-TD-E
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    Verical 2SA1766-D-TD-E 30,000 2,715
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    onsemi 2SA1766-D-TD-E

    2SA1766 - Bipolar PNP Transistor, 0.3A 25V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SA1766-D-TD-E 30,000 1
    • 1 $0.13
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    • 1000 $0.1105
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    2SA1766 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1766 Kexin PNP Epitaxial Planar Silicon Original PDF
    2SA1766 Sanyo Semiconductor High-gain, low-frequency general-purpose amplifier Original PDF
    2SA1766 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Original PDF
    2SA1766 TY Semiconductor PNP Epitaxial Planar Silicon - SOT-89 Original PDF
    2SA1766 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1766 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1766 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1766 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1766 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF

    2SA1766 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sA1766

    Abstract: ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al
    Text: Ordering number:ENN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions unit:mm 2038A [2SA1766] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes.


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    PDF ENN3182B 2SA1766 2SA1766] 25max 2sA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al

    marking al

    Abstract: 200a smd 2sA1766
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25


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    PDF 2SA1766 -10mA -200mA -200A marking al 200a smd 2sA1766

    D209

    Abstract: 2SA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 31824 D-209
    Text: 2SA1766 注文コード No. N 3 1 8 2 C 三洋半導体データシート 半導体ニューズ No.N3182B をさしかえてください。 2SA1766 PNP エピタキシャルプレーナ型シリコントランジスタ 高 hFE, 低周波一般増幅用 特長


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    PDF 2SA1766 N3182B 250mm2 200mA 33110LA --500mA --300mA ITR04530 ITR04534 D209 2SA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 31824 D-209

    2SA1766

    Abstract: ITR04527 marking al
    Text: 2SA1766 Ordering number : EN3182C SANYO Semiconductors DATA SHEET 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 .


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    PDF 2SA1766 EN3182C 2SA1766 ITR04527 marking al

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


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    PDF 2SA1766 -10mA -200mA -200A

    2sA1766

    Abstract: 31821 MARKING AL
    Text: Ordering number:EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High DC current gain hFE=500 to 1200 . · Large current capacity.


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    PDF EN3182B 2SA1766 2SA1766] 2sA1766 31821 MARKING AL

    Transistor B C 458

    Abstract: c458 2sa1766
    Text: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity


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    PDF 3182B 250mm2 2SA1766 1200MO/6279MO Transistor B C 458 c458 2sa1766

    2SA169

    Abstract: 2SC4390 2sc4705 2SC5155
    Text: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s


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    PDF 2SC4909 250mm 2SA1687 2SC4446 2SC4694 2SA125: 2SC3134 2SC469ti 2SC313Í 2SA169 2SC4390 2sc4705 2SC5155

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


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    PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155

    AUDIO AMPLIFIER

    Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
    Text: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr


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    PDF FC150 2SC3651 2SC3650 2SA1766 2SC4705 2SC4390 2SK596 2SK546 2SA1813/2SC4413) 2SK304 AUDIO AMPLIFIER audio amplifier POWER TRANSISTORS 2SK404

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    V1525

    Abstract: 2SC3114 2SA1692 2SC3068 High Vebo 001S4 2SC3071 2sc3495
    Text: b3E í 7W07b SAfÍYO 001S42Q ISS « T S A J H i g h “ h p g H i g h V g ß Q T r a n s i s t o r s SANYO SEMICONDUCTOR CORP Case outlines unit:11ml SANYO :SMCP »Me— 0.1 B’ -Base n -Jlector ltter ale H i g h —hFE, H1g h —VEBO T r a n s i s-toi-s


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    PDF 7W07b 001S42Q 2SC4909 R1-47K R2-47K Tc-25lC. 250mm 2SC4919 2SA1813 2SC4413 V1525 2SC3114 2SA1692 2SC3068 High Vebo 001S4 2SC3071 2sc3495

    2SA1766

    Abstract: No abstract text available
    Text: Ordering num ber: EN 3182B N0.3182B SA\YO i _ 2 S A 17 6 6 PNP Epitaxial Planar Silicon Transistor High h;pE> Low-Frequency General-Purpose Amp Applications F eatu res . Adoption of FBET, MBIT processes • High DC current gain hpE “ 500 to 1200


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    PDF 3182B 250mm2x 2SA1766

    Untitled

    Abstract: No abstract text available
    Text: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p


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    PDF 2SA1338 2SA1508 2SA1573 2SA1580 2SD1048 2SD1618 2SD1619 2SD1620 2SD1621 2SD1622

    2sc3495

    Abstract: 2SA1692
    Text: SAfiYO High-hpg ole H i gin — h F E . H i g h — V E B O F e a t u r e s ♦ ♦ ♦ ♦ High V^ßQ T r a n s i s t o r s T r - a n s i s t o r s l :Base SANYO:SMCP 2:Emi tter 3 -Co 1lector X cat. i o n s A p p l c High hFE 500 to 3200 * AF amp High VEBO S 15V


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    PDF 2SC4909 R2-47K 250mm 2SC4695 2SA1253 2SC3135 2SA1246 2SC3114 2SC3792 O-126LP 2sc3495 2SA1692