ALUMINA SUBMOUNT Search Results

Contextual Info: SBMT Series Submounts Submount materials include quartz, alumina, aluminum nitride, kovar and beryllium oxide. Applications include heat sinks, standoffs, height matching, bonding pads and jumpers. Custom sizes and patterns available to your design specifications in thicknesses from 3 to 60 mils and

JDSU laser diode

Abstract: Alumina submount jdsu laser diode 980 nm JDSU pump laser 10 gb laser diode laser diode jdsu jdsu
Contextual Info: COMMERCIAL LASERS High-speed, High-temperature Data Link Diode Lasers 5800 Series Key Features • Modulation rates up to 1.25 Gb/s • Temperature operating range -40 to 125 °C • 990 nm wavelength • Alumina submount Applications • Avionic LANs • Satellite data links

Contextual Info: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high

LED LASER

Abstract: ausn submount
Contextual Info: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high

ausn submount

Contextual Info: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high

Contextual Info: V ishay I n tertech n o l o g y, I n c . AND TEC I INNOVAT O L OGY Vishay Electro-Films N HN CERAMIC THIN FILM LED PACKAGE O 19 62-2012 Resistors - Custom-Designed Packages LED Submounts Introduction LED die performance is extremely sensitive to temperature. As junction temperature

Alumina submount

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . V ishay Ele c tro - Films l e d sub m o u n t s ceramic thin film led package p r o d uc t o v e r v i e w w w w. v i s h a y. c o m ceramic thin film led package Vishay Electro-Films Vishay Electro-Films: Ceramic Thin Film LED Package

AS970

Abstract: MA92W TCR505 Al2O3 20M100 Maruwa substrate thermal conductivity maruwa
Contextual Info: 薄膜回路基板 THIN FILM METALIZED SUBSTRATES MARUWAの薄膜回路基板は実績ある各種セラミッ ク素材と、長年培ってきた薄膜メタライズ技術の融合 の結果生まれた基板材料です。それ故、ユーザー要求

capacitors coefficient of thermal expansion

Abstract: thermal conductivity maruwa Maruwa Capacitors a 92 similar Alumina submount Maruwa Thin Film Capacitors AS970 MA92W
Contextual Info: MARUWA GENERAL CATALOG THIN-FILM SUBSTRATES The thin-film substrates are the result of the fusion of various time-tested ceramic materials and the thin-film metalizing technology developed over many years. The materials permit the production of sophisticated circuit

Alumina submount

Abstract: PD7087 PD708C7 PD7937 PD793D7 mitsubishi receiver
Contextual Info: MITSUBISHI PHOTO DIODES PD7XX7 SERIES InGaAs PIN PHOTO DIODES PD7087, PD708C7, PD7937, PD793D7 Feature DESCRIPTION PD7XX7 Series are InGaAs pin photodiodes which has a sensitive area of φ 40µm. PD7XX7 is suitable for receving the light having a wavelength band of 1000 to 1600nm.

EPITAXX ETX 300

Abstract: K050 EPITAXX ETX 75 InGaas PIN photodiode, 1550 sensitivity 00003S PD submount HYBRID CERAMIC Photodiodes ETX 40 InGaas PIN photodiode, 1550 sensitivity application
Contextual Info: = — = = ETX 75CER-H/F ETX 300CER-H/F iPiTlIAA H ig h Speed InGaAs P hotodiodes Front Illuminated on Ceramic Submounts Fe a tu res •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current

EPITAXX ETX 300

Abstract: InGaas PIN photodiode, 1550 sensitivity EPITAXX photodiodes EPITAXX ETX 75 InGaAs backside illuminated ingaas photodiode inGaAs photodiode 1550 InGaas PIN photodiode, 1550 ETX 40
Contextual Info: E g = = = v v ETX 75CER-H/F ETX 300CER-H/F High Speed InGaAs Photodiodes Front Illuminated on Ceramic Submounts Features •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current ■Planar, passivated diode

PD8042

Abstract: PD893D2 PD8932 PD893D
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

PD8043

Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

Contextual Info: Table of Contents SPECIFICATIONS: Chip Capacitor Standards . . . . . . . . . . . . . . . . . . . . . . 2 Series Resonant Frequency . . . . . . . . . . . . . . . . . . . . 2 Capacitor Substrates and Metallizations . . . . . . . . . . 3 Typical Temperature Characteristics . . . . . . . . . . . 4-5

Contextual Info: V ishay I ntertechnolog y, I nc . AND TEC I INNOVAT O L OGY Using Thin Film Substrates N HN DIODE SUBMOUNT CAPABILITIES O 19 62-2012 Resistors - Vishay Electro-Films LED Submounts INTRODUCTION Vishay Electro-Films, with its complete in-house capability, offers a wide variety of solutions for

1300nm

Abstract: PD793D26 PD7XX26 PIN 1300nm pin photo diodes
Contextual Info: MITSUBISHI PHOTO DIODES PD7XX26 SERIES InGaAs PIN PHOTO DIODES PD793D26 Feature DESCRIPTION PD793D26 Series are InGaAs pin photodiodes which has a sensitive area of φ 20µm. PD7XX26 is suitable for receving the light having a wavelength band of 1000 to 1600nm.

InGaas PIN photodiode chip

Contextual Info: Pin Photodiode KeyFeatures InGaAs Material Planar Zn Diffused Structure 70 Micron in Diameter Active Area Front-illuminated Photodiode High Responsivity 0.85 A/W on a Wide Range (1300nm to 1600nm Low Dark Current Applications 2.5 Gb/s Receiver Modules Telecom

avalanche 1550nm photodiode 5 Ghz

Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.

TN0002

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Resistive Products Tech Note TN0002 Thin Film High-Density Integration HDI Design Guidelines Abstract The design of single- or double-sided Thin Film high density multi-layer substrates depends on a wide range

JDS Uniphase 5800

Abstract: 2 Wavelength Laser Diode Uniphase-5800 5800-A Alumina submount
Contextual Info: Product Bulletin 5800 Series High-speed, High-Temperature Lasers High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. JDS Uniphase-5800 Series lasers are able to transmit data at 1.25 Gb/s

SDL laser diode manual

Abstract: JDS Uniphase laser SDL Laser diode Laser SDL Laser SDL 980
Contextual Info: Product Bulletin High-speed, High-temperature Data Link Laser Diodes SDL-5800 Series High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. SDL-5800 series lasers are able to transmit data at 1.25 Gb/s

SDL-5800

Abstract: SDL laser diode manual JDS Uniphase 5800 10 gb laser diode Laser SDL 980 SDL laser diode cfr 1040 laser diode lifetime laser link Laser SDL
Contextual Info: Product Bulletin SDL-5800 Series High-speed, High-temperature Data Link Laser Diodes High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. SDL-5800 series lasers are able to transmit data at 1.25 Gb/s

FR4 substrate with dielectric constant 4.4

Abstract: C-MAC MicroTechnology Thermo Electric Cooling America FR4 substrate epoxy dielectric constant 4.4 c-mac heraeus CMAC microwave aluminium wire bonding price heat pipes
Contextual Info: Fibre Optical Module Solutions Optical Module Fibre Splicing Optical Splitter Assembly C-MAC MicroTechnology provides a range of services from design and engineering through to sophisticated contract Fibre Splicing Equipment assembly of modules, boards, trays and cabinets.