Untitled
Abstract: No abstract text available
Text: SBMT Series Submounts Submount materials include quartz, alumina, aluminum nitride, kovar and beryllium oxide. Applications include heat sinks, standoffs, height matching, bonding pads and jumpers. Custom sizes and patterns available to your design specifications in thicknesses from 3 to 60 mils and
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AL96/AL99
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JDSU laser diode
Abstract: Alumina submount jdsu laser diode 980 nm JDSU pump laser 10 gb laser diode laser diode jdsu jdsu
Text: COMMERCIAL LASERS High-speed, High-temperature Data Link Diode Lasers 5800 Series Key Features • Modulation rates up to 1.25 Gb/s • Temperature operating range -40 to 125 °C • 990 nm wavelength • Alumina submount Applications • Avionic LANs • Satellite data links
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5800DIODELASER
498-JDSU
5378-JDSU
JDSU laser diode
Alumina submount
jdsu laser diode 980 nm
JDSU pump laser
10 gb laser diode
laser diode jdsu
jdsu
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Untitled
Abstract: No abstract text available
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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11-Mar-11
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LED LASER
Abstract: ausn submount
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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18-Jul-08
LED LASER
ausn submount
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ausn submount
Abstract: No abstract text available
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
ausn submount
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Untitled
Abstract: No abstract text available
Text: V ishay I n tertech n o l o g y, I n c . AND TEC I INNOVAT O L OGY Vishay Electro-Films N HN CERAMIC THIN FILM LED PACKAGE O 19 62-2012 Resistors - Custom-Designed Packages LED Submounts Introduction LED die performance is extremely sensitive to temperature. As junction temperature
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VMN-PL0440-1204
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Alumina submount
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V ishay Ele c tro - Films l e d sub m o u n t s ceramic thin film led package p r o d uc t o v e r v i e w w w w. v i s h a y. c o m ceramic thin film led package Vishay Electro-Films Vishay Electro-Films: Ceramic Thin Film LED Package
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operatin65-6788-6668
VMN-PL0440-1003
Alumina submount
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AS970
Abstract: MA92W TCR505 Al2O3 20M100 Maruwa substrate thermal conductivity maruwa
Text: 薄膜回路基板 THIN FILM METALIZED SUBSTRATES MARUWAの薄膜回路基板は実績ある各種セラミッ ク素材と、長年培ってきた薄膜メタライズ技術の融合 の結果生まれた基板材料です。それ故、ユーザー要求
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5mm/4mil60mil
AS970
MA92W
TCR505
Al2O3
20M100
Maruwa substrate
thermal conductivity maruwa
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capacitors coefficient of thermal expansion
Abstract: thermal conductivity maruwa Maruwa Capacitors a 92 similar Alumina submount Maruwa Thin Film Capacitors AS970 MA92W
Text: MARUWA GENERAL CATALOG THIN-FILM SUBSTRATES The thin-film substrates are the result of the fusion of various time-tested ceramic materials and the thin-film metalizing technology developed over many years. The materials permit the production of sophisticated circuit
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Alumina submount
Abstract: PD7087 PD708C7 PD7937 PD793D7 mitsubishi receiver
Text: MITSUBISHI PHOTO DIODES PD7XX7 SERIES InGaAs PIN PHOTO DIODES PD7087, PD708C7, PD7937, PD793D7 Feature DESCRIPTION PD7XX7 Series are InGaAs pin photodiodes which has a sensitive area of φ 40µm. PD7XX7 is suitable for receving the light having a wavelength band of 1000 to 1600nm.
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PD7087,
PD708C7,
PD7937,
PD793D7
1600nm.
1600nm
PD708C7)
PD708C7
PD7937
Alumina submount
PD7087
PD708C7
PD7937
PD793D7
mitsubishi receiver
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PD8042
Abstract: PD893D2 PD8932 PD893D
Text: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.
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PD8042,
PD8932,
PD893D2
1600nm.
1600nm
PD8042
PD8932
PD8042
PD893D2
PD8932
PD893D
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PD8043
Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
Text: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.
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PD8043,
PD8933,
PD893D3
1600nm.
1600nm
PD8043
avalanche 1550nm photodiode 5 Ghz
1550nm photodiode 2 Ghz
PD8933
PD893D3
InGaAs Photodiode 1550nm
avalanche photodiode ingaas ghz
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Untitled
Abstract: No abstract text available
Text: Chip Capacitor Standards • Bond Strength–exceeds Mil Std-883, Method 2011 • Sheer Strength–exceeds Mil Std-883, Method 2019 General Electrical Characteristics • Quality Control System–Mil-I-45208 Operating Frequency: Up to 100 GHz • Established Reliability Testing–available to
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Std-883,
Mil-I-45208
Mil-C-49464
Mil-PRF-38534
Mil-PRF-38534
C-200.
C-200
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Untitled
Abstract: No abstract text available
Text: Table of Contents SPECIFICATIONS: Chip Capacitor Standards . . . . . . . . . . . . . . . . . . . . . . 2 Series Resonant Frequency . . . . . . . . . . . . . . . . . . . . 2 Capacitor Substrates and Metallizations . . . . . . . . . . 3 Typical Temperature Characteristics . . . . . . . . . . . 4-5
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1300nm
Abstract: PD793D26 PD7XX26 PIN 1300nm pin photo diodes
Text: MITSUBISHI PHOTO DIODES PD7XX26 SERIES InGaAs PIN PHOTO DIODES PD793D26 Feature DESCRIPTION PD793D26 Series are InGaAs pin photodiodes which has a sensitive area of φ 20µm. PD7XX26 is suitable for receving the light having a wavelength band of 1000 to 1600nm.
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PD7XX26
PD793D26
PD793D26
1600nm.
1600nm
1300nm
1300nm,
1300nm
PIN 1300nm
pin photo diodes
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InGaas PIN photodiode chip
Abstract: No abstract text available
Text: Pin Photodiode KeyFeatures InGaAs Material Planar Zn Diffused Structure 70 Micron in Diameter Active Area Front-illuminated Photodiode High Responsivity 0.85 A/W on a Wide Range (1300nm to 1600nm Low Dark Current Applications 2.5 Gb/s Receiver Modules Telecom
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1300nm
1600nm)
1600nm
InGaas PIN photodiode chip
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avalanche 1550nm photodiode 5 Ghz
Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
Text: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.
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PD893E6
1580nm.
1580nm
avalanche 1550nm photodiode 5 Ghz
Photo Diodes
1550nm photodiode 5 Ghz
PD893E6
mitsubishi receiver
InGaAs Photodiode 1550nm
mitsubishi avalanche photodiode ingaas ghz
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TN0002
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Resistive Products Tech Note TN0002 Thin Film High-Density Integration HDI Design Guidelines Abstract The design of single- or double-sided Thin Film high density multi-layer substrates depends on a wide range
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TN0002
29-Jun-05
TN0002
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JDS Uniphase 5800
Abstract: 2 Wavelength Laser Diode Uniphase-5800 5800-A Alumina submount
Text: Product Bulletin 5800 Series High-speed, High-Temperature Lasers High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. JDS Uniphase-5800 Series lasers are able to transmit data at 1.25 Gb/s
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Uniphase-5800
Uniphase-5800
Uniphase-5800,
JDS Uniphase 5800
2 Wavelength Laser Diode
5800-A
Alumina submount
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SDL laser diode manual
Abstract: JDS Uniphase laser SDL Laser diode Laser SDL Laser SDL 980
Text: Product Bulletin High-speed, High-temperature Data Link Laser Diodes SDL-5800 Series High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. SDL-5800 series lasers are able to transmit data at 1.25 Gb/s
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SDL-5800
SDL-5800,
SDL laser diode manual
JDS Uniphase laser
SDL Laser diode
Laser SDL
Laser SDL 980
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SDL-5800
Abstract: SDL laser diode manual JDS Uniphase 5800 10 gb laser diode Laser SDL 980 SDL laser diode cfr 1040 laser diode lifetime laser link Laser SDL
Text: Product Bulletin SDL-5800 Series High-speed, High-temperature Data Link Laser Diodes High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. SDL-5800 series lasers are able to transmit data at 1.25 Gb/s
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SDL-5800
SDL-5800
SDL-5800,
SDL laser diode manual
JDS Uniphase 5800
10 gb laser diode
Laser SDL 980
SDL laser diode
cfr 1040
laser diode lifetime
laser link
Laser SDL
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FR4 substrate with dielectric constant 4.4
Abstract: C-MAC MicroTechnology Thermo Electric Cooling America FR4 substrate epoxy dielectric constant 4.4 c-mac heraeus CMAC microwave aluminium wire bonding price heat pipes
Text: Fibre Optical Module Solutions Optical Module Fibre Splicing Optical Splitter Assembly C-MAC MicroTechnology provides a range of services from design and engineering through to sophisticated contract Fibre Splicing Equipment assembly of modules, boards, trays and cabinets.
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EPITAXX ETX 300
Abstract: K050 EPITAXX ETX 75 InGaas PIN photodiode, 1550 sensitivity 00003S PD submount HYBRID CERAMIC Photodiodes ETX 40 InGaas PIN photodiode, 1550 sensitivity application
Text: = — = = ETX 75CER-H/F ETX 300CER-H/F iPiTlIAA H ig h Speed InGaAs P hotodiodes Front Illuminated on Ceramic Submounts Fe a tu res •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current
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75CER-H/F
300CER-H/F
33bOMDb
0D0D358
75CER-F/H,
300CER-F/H
75CER-H,
300CER-H
O-H-02
75CER-F
EPITAXX ETX 300
K050
EPITAXX ETX 75
InGaas PIN photodiode, 1550 sensitivity
00003S
PD submount
HYBRID CERAMIC
Photodiodes
ETX 40
InGaas PIN photodiode, 1550 sensitivity application
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EPITAXX ETX 300
Abstract: InGaas PIN photodiode, 1550 sensitivity EPITAXX photodiodes EPITAXX ETX 75 InGaAs backside illuminated ingaas photodiode inGaAs photodiode 1550 InGaas PIN photodiode, 1550 ETX 40
Text: E g = = = v v ETX 75CER-H/F ETX 300CER-H/F High Speed InGaAs Photodiodes Front Illuminated on Ceramic Submounts Features •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current ■Planar, passivated diode
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75CER-H/F
300CER-H/F
33b040b
75CER-F/H,
300CER-F/H
75CER-H,
300CER-H
75CER-F
300CER-F
io-M-02
EPITAXX ETX 300
InGaas PIN photodiode, 1550 sensitivity
EPITAXX
photodiodes
EPITAXX ETX 75
InGaAs
backside illuminated ingaas photodiode
inGaAs photodiode 1550
InGaas PIN photodiode, 1550
ETX 40
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