AM01504V1 Search Results

Contextual Info: STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 80 A

Contextual Info: STGF14HF60KD STGP14HF60KD 14 A - 600 V - short-circuit rugged IGBT Preliminary data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution

GW40NC60KD

Contextual Info: STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop VCE(sat • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 • IGBT co-packaged with ultra fast free-wheeling

GW45HF60WD

Abstract: STGW45HF60WD gw45hf60 ST IGBT code marking
Contextual Info: STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features • Improved Eoff at elevated temperature ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Ultra fast soft recovery antiparallel diode Applications 2 3 1 ■ Welding ■ High frequency converters

Contextual Info: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE sat = 2.0 V (typ.) @ IC = 25 A

STGD3NC120H

Contextual Info: STGD3NC120H 7 A, 1200 V very fast IGBT Datasheet − production data Features • High voltage capability ■ High speed TAB Applications ■ Home appliance ■ Lighting 3 2 1 Description IPAK TO251 This device is a very fast IGBT developed using advanced PowerMESH technology. This

Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220

Contextual Info: STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 1 • Tail-less switching off 3 2 • Low saturation voltage: VCE sat = 1.8 V (typ.)

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

Contextual Info: STGW40N120KD 40 A - 1200 V - short circuit rugged IGBT Preliminary Data Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application

Contextual Info: STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 2 • Tail-less switching off

Contextual Info: STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT EAS 300 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • ESD gate-emitter protection TAB • Gate-collector high voltage clamping

Contextual Info: STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Datasheet - production data Features TAB • Designed for automotive applications and AEC-Q101 qualified TAB • Low threshold voltage 3 1 D²PAK • Low on-voltage drop TAB

GW40N120

Abstract: GW40N120KD STGW40N120 STGW40N120KD GWA40N120KD STGWA40N120KD
Contextual Info: STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode

GW35HF60W

Abstract: STGW35HF60W STGF35HF60W gf35hf60w C5000 IC200 gf35
Contextual Info: STGF35HF60W STGW35HF60W 35 A, 600 V Ultrafast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications 2 3 3 1 ■ Welding ■ High frequency converters ■ Power factor correction TO-247 1 2 TO-220FP

Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution

Contextual Info: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V

GW60H65DFB

Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)

GP19NC60SD

Abstract: STGF19NC60SD STGP19NC60SD
Contextual Info: STGF19NC60SD STGP19NC60SD 20 A, 600 V fast IGBT with Ultrafast diode Features • Very low on-voltage drop VCE(sat ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. ■ TAB 3 1 IGBT co-packaged with Ultrafast freewheeling

semikron automotive inverter

Abstract: scheme SEMITOP 1 Package STG3P3M25N60 JESD97 UC 493 semitopmodule SEMITOP 3 Package
Contextual Info: STG3P3M25N60 3 phase inverter IGBT - SEMITOP 3 module Features • Low on-voltage drop VCE(sat ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ High frequency operation up to 70 kHz