AM27C512 EPROM Search Results

Contextual Info: Am27C512 65,536 X 8-Bit CMOS EPROM Am27C512 ADVANCE INFORMATION DISTINCTIVE CH A RACTERISTIC S • • • Fast a c c e s s time — 150 n s Low-power dissipation Both interactive and new Flashrite* programm ing algorithms available • • • • S in gle 5-volt power supply

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

Contextual Info: Advanced Micro Devices Am27C512 65,536 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns JEDEC-approved pinout Low power consum ption: jxA maximum standby current ± 1 0 % power supply tolerance -1 0 0 Fast Flashrlte programming

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

IN3064

Contextual Info: a Preliminary Advanced Micro Devices Am27C512L 65,536 X 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ JEDEC-approved pinout - Plug in replacement fo r Am27C512 Fast access time—70ns Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz

AM27C512

Abstract: AM27C512-120 am33c93a AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93
Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

AM27CS12-300

Abstract: AM27C512DC LS003312
Contextual Info: a Advaß Am27C512 65,536 x 8-Bit CMOS EPROM Devices DISTINCTIVE CHARACTERISTICS • • • Fast access time — 90 ns Low power consumption: - 100 mA maximum standby current Programming voltage: 12.5 V • • • • Single +5-V power supply JEDEC-approved pinout

d501ad

Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: FINAL & Am27C512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 70 ns ■ Low power consumption — 20 |jA typical C M O S standby current

Contextual Info: il Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 70 ns ■ Low power consumption ■ High noise immunity — 20 nA typical CMOS standby current

AM27C512

Abstract: AM27C512-120
Contextual Info: FINAL Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — 55 ns ■ High noise immunity ■ Low power consumption — 20 µA typical CMOS standby current

AM27C512

Abstract: AM27C512-120 AM27C512-150 AM27C512-150DC
Contextual Info: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: FINAL AMDZ1 Am27C512 512 Kilobit 64 K X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 55 ns ■ Low power consumption ■ Versatile features for simple interfacing

Product Selector Guide

Contextual Info: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS n n Fast access time n — Speed options as fast as 55 ns Low power consumption n n n n n n Latch-up protected to 100 mA from –1 V to VCC + 1 V High noise immunity JEDEC-approved pinout

Contextual Info: AMD3 Am27C512 512 Kilobit 64 K X 8-Bit CMOS EPRO DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity ■ Versatile features for simple interfacing — Speed options as fast as 55 ns

AM27C512

Abstract: AM27C512-90DC 127C512
Contextual Info: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity

eprom 27C512 28pin

Contextual Info: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption

27C512 eprom

Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V F a s t a c c e s s tim e — 5 5 ns L o w p o w e r c o n s u m p tio n High noise immunity — 2 0 (iA typica l C M O S sta n d b y cu rent

Contextual Info: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T -4 6 -1 3-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current

am27C512 eprom

Abstract: AM27C512-200 AM27C512-25O/BXA
Contextual Info: Advanced Micro Devices A m 2 7 C 5 1 2 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time V cc + 1 V — 70 ns ■ High noise Immunity ■ Low power consumption ■ Versatile features for simple interfacing

Am27C512s

Abstract: AM27C512-155
Contextual Info: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current

AM27C512

Abstract: AM27C512-120DC
Contextual Info: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T-46-13-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current

AM27G512-200

Abstract: AM27G
Contextual Info: ADV MI CR O MEMORY 14E D | t - q 0 E S 7 S 2 Û 0 0 2 7 3 ^ 5 fl | u i ' ? , - Q A A m 2 7 C 5 1 2 Adva£ 65,536 x 8-Bit CMOS EPROM Devices D ISTIN CTIVE CH ARACTERISTICS • • • Fast access tim e — 90 ns Low power consumption; - 1 0 0 ¡th maximum standby current

Contextual Info: FIN AL AMDZ1 A m 2 7 C 5 1 2 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 55 ns ■ Low power consumption