AM2864A Search Results
AM2864A Price and Stock
AMD AM2864AE-200DCIC,EEPROM,8KX8,MOS,DIP,28PIN,CERAMIC |
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AM2864AE-200DC | 19 |
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AMD AM2864A-30/BXA |
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AM2864A-30/BXA | 8 |
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AMD AM2864ADC |
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AM2864ADC | 8 |
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AMD AM2864A-25/BXA |
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AM2864A-25/BXA | 2 |
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AMD AM2864AE-255DCIC,EEPROM,8KX8,MOS,DIP,28PIN,CERAMIC |
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AM2864AE-255DC | 2 |
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AM2864A Datasheets (80)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AM2864AE-200DC |
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8192 x 8-Bit Electrically Erasable PROM | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AM2864AE-200DCB |
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AM2864AE-200DE |
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AM2864AE-200DEB |
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AM2864AE-200DI |
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AM2864AE-200DIB |
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AM2864AE-200LC |
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AM2864AE-200LCB |
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AM2864AE-200LE |
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AM2864AE-200LEB |
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AM2864AE-200LI |
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AM2864AE-200LIB |
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AM2864AE-205DC |
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AM2864AE-205DCB |
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AM2864AE-205DI |
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AM2864AE-205DIB |
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AM2864AE-205LC |
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AM2864AE-205LCB |
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AM2864AE-205LI |
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AM2864AE-205LIB |
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8192 x 8-Bit Electrically Erasable PROM | Scan |
AM2864A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2864AE-205
Abstract: M2864B
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Am2864AE 10-year 2864AE 2864AE-205 M2864B | |
LM393
Abstract: 74HCTOO
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Am2864AE/BE LM393 74HCTOO | |
eeprom 2864a
Abstract: AM2864A-2 rgv 527 Am2864A-3
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Am2864A 32-byte 10-year Am9864 536-bit eeprom 2864a AM2864A-2 rgv 527 Am2864A-3 | |
TMS27256
Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
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2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32 | |
Contextual Info: n Am2864AE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication |
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Am2864AE 32-byte 10-year 536-bit A0-A12> | |
TDA 2051
Abstract: AM2864AE-255DC
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Am2864AE 32-byte 10-year 536-bit wf025150 TDA 2051 AM2864AE-255DC | |
AM28Contextual Info: Die Business Am2864AE/BE DICE AGREEMENT AMD sells EEPROM dice at the commercial grade level to authorized distributors and OEM customers. Full testing is not possible on EEPROM dice. The Am2864AE/BE Dice Agreement see Figure 5-1 for an example describes the guarantees and limitations assodated with this business, |
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Am2864AE/BE 0324A-011A 0324A -012A AM28 | |
floating-gate
Abstract: Valence eeprom memory cell
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0324A-006A floating-gate Valence eeprom memory cell | |
eeprom 2864a
Abstract: X2864AD X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25
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28-Pln X2864AD-25 X2864AD X2864AD-35 X2864AD-45 X2864ADI-25 X2864ADI X2864ADI-35 X2864ADI-45 X2864ADM-25 eeprom 2864a X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25 | |
Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat ing failure rates. The monitors include data from endur |
OCR Scan |
NS-18 Am2864AE/BE Am2864B | |
Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
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ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 | |
M38510Contextual Info: REVISIONS DATE YR-MO-QA LTR DESCRIPTION A E d ito ria l changes throughout. Table I changes include: Vjh change, regrouped devices to d ifferen t lim its . Table I I , subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs |
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M38510/228XXBXX. 5SO-547 M38510 | |
am28c256Contextual Info: Am28C256 3 2 K x 8 Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 100 /uA power-down current 64-byte page write |
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Am28C256 64-byte Am2864A Am2864B | |
X2864AD
Abstract: X2864AEMB25 X2864AEMB-25 X2864ADMB-25 X2864AEMB X2864AEMB-35 X2864ADMB 60395 X2864ADMB-35 DM2864H-250
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5962-8683010XX 5962-8683010YX 5962-8683010ZY M38510/228XXBXX. X2864AD X2864AEMB25 X2864AEMB-25 X2864ADMB-25 X2864AEMB X2864AEMB-35 X2864ADMB 60395 X2864ADMB-35 DM2864H-250 | |
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ae29F2008
Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
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GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764 | |
am28c256Contextual Info: ADV M IC R O ÍM E H O R Y } l b De | [1 2 5 7 5 2 6 Am28C256 0G2fe.fe.2fl i 27 32K x 8 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current |
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Am28C256 64-byte | |
Device-List
Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
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LabTool-48 AC29LV400B AC29LV400T M6759 M8720 AS29F040 Device-List NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15 | |
NEC D2732D
Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
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Dataman-48 M6759 M8720 AS29LV800B AS29LV800T EP1210 EP220 NEC D2732D nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25 | |
atc 93lc46
Abstract: 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020
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LabTool-48XP AC29LV400B AC39VF080 AC39VF088 AC29LV400T AC39VF800 M6759 atc 93lc46 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020 | |
Device-List
Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
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ALL-11 Z8E000 ADP-Z8E001 Z8E001 Z90231 ADP-Z90259-SD Z90241 ADP-Z90241-SD Device-List CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640 | |
X2864Aemb-25
Abstract: X2864ADMB-25 74K-IM-W9U 20/AM2864A-25/BXA X2864ADMB35 X2864AD m2864 x2864aemb35 X2864AEMB25 WF vqe 24 e
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M38510/228 5962-8683010XX 5962-8683010YX 5962-8683010ZY M38510/228XXBXX. M11pitas, X2864Aemb-25 X2864ADMB-25 74K-IM-W9U 20/AM2864A-25/BXA X2864ADMB35 X2864AD m2864 x2864aemb35 X2864AEMB25 WF vqe 24 e | |
Contextual Info: EEPROM Highlights WHY USE EEPROMS? A wide spectrum of memory devices have been devel oped to fill particular needs. Read-Only Memories ROMs have high density and fast data access. The biggest disadvantage is the production volume required with an unalterable data pattern. Random-Access |
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Am2864BE Am2864AE | |
A25L020AO-F
Abstract: rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40
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Dataman-48XP/48UXP AC25LV010 AC29LV400B AC29LV400T AC39LV010 32PLCC AC39LV020 AC39LV040 A25L020AO-F rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40 | |
c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
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1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N |