AM29BDS640G Search Results

Contextual Info: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)

Contextual Info: Am29BDS640G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29BDS640G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29BDS640G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: Am29BDS640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640G. Please refer to the S29WS-K family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes

FSC093

Contextual Info: PRELIMINARY Am42BDS640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)

Contextual Info: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)

Am54BDS128AGB89I

Contextual Info: ADVANCE INFORMATION Am54BDS128AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

BDS640GT98I

Contextual Info: ADVANCE INFORMATION Am29BDS640G 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology

Contextual Info: ADVANCE INFORMATION Am54BDS128AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

BDS640GT78I

Abstract: 39-3A-3B-3C-3D-3E-3F-38h-etc
Contextual Info: ADVANCE INFORMATION Am29BDS640G 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology

Contextual Info: ADVANCE INFORMATION Am29BDS640G 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology

Contextual Info: PRELIMINARY Am42BDS640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)

TSOP-20 FOOTPRINT

Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Am42BDS6408G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

TSOP-20 FOOTPRINT

Abstract: SA1115 pl032j
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0-Volt only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described

AM29PDL

Abstract: PL032J S29PL-J pl127
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

PL129J

Abstract: AMD marking CODE flash AM29DL PL032J70BAI12 SA1115 Spansion s29pl127j AM29PDL PL032J TSOP-20 FOOTPRINT Pl064j
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical

TSOP-20 FOOTPRINT

Abstract: AM29PDL PL032J 000000h-000FFFh pl064j70baw12 SA55
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control PRELIMINARY Distinctive Characteristics ARCHITECTURAL ADVANTAGES „ „ 128/128/64/32 Mbit Page Mode devices

sa1, NXB

Abstract: PL032J SA182 SA276 SA-194 Pl064j SA178 SA1127 SA216 SA284
Contextual Info: S29PL-J 128 / 128 / 64 / 32M ビット（8 / 8 / 4 / 2M x 16 - ビット） CMOS 3.0 V 単一電源， - リード / ライト同時実行， Enhanced VersatileIO 制御 TM フラッシュメモリ S29PL-J Cover Sheet データシート Advance Information

SA1115

Abstract: PL064J70BAI12
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control PRELIMINARY Distinctive Characteristics ARCHITECTURAL ADVANTAGES „ „ 128/128/64/32 Mbit Page Mode devices

jedec mo-142

Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

PL032J70BAI12

Abstract: FBGA 9 x 12 package tray pl064j70baw12 transistor marking A21 tray datasheet bga 8x9 pl064j60 PL064J55BAI12 S29PL032J70BAI12 SA2-57 Spansion s29pl127j
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control PRELIMINARY Distinctive Characteristics ARCHITECTURAL ADVANTAGES „ „ 128/128/64/32 Mbit Page Mode devices

Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion