AMPLIFIER Search Results

UM5583

Abstract: UM55 SPKP rs 355 integrated circuits 5583H
Contextual Info: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier

UC3901 application diagrams

Abstract: UC2901 T270pF UC1901 scf 4242 UC3901
Contextual Info: y U N IT R O D E UC1901 UC2901 UC3901 Isolated Feedback Generator • Low-Cost Alternative to Optical Couplers • Internal 1% Reference and Error Amplifier • Internal Carrier Oscillator Usable to 5mHz • Modulator Synchronizable to an External Clock •

Contextual Info: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TLE2024, TLE2024A, TLE2024B, TLE2024Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 2 6 5 , M A Y 1 9 8 9 - R E V IS E D O C T O B E R 1991 available features Supply Current . . . 1 mA Max High Open-Loop Gain . . . 7 V/jiV 137 dB Typ

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

mci458

Abstract: C1458 MC1468 MCI458 C C1558 mci558
Contextual Info: TEXAS IN ST R IflE L IN /IN T F C D • A T bl754 0077S04 fl MCI 558, MCI458 DUAt GENERAL-PURPOSE OPERATIONAL AMPLIFIERS T - 7 9 -0 5 -2 0 D 9 7 2 , F E B R U A R Y 19 7 1 - R E V I S E D M A Y 1 9 8 8 Short-Circuit Protection M C1658 . . . JG PACKAGE M C 1468 . . . D. JG . OR P PACKAG E

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

2SD1411

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

Contextual Info: RN6006 RN6006 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in m m 1,6M A X . 1.7M AX. m - W ith B u ilt-in B ias R esistors S im p lify C irc u it D esign R educe a Q u a n tity of P a r ts a n d M a n u fa c tu rin g Process

power supply ax 322

Contextual Info: TL322I, TL322C DUAL LOW-POWER OPERATIONAL AMPLIFIERS D 2 5 6 7 , OCTOBER 1 9 7 9 -R E V IS E D OCTOBER 1 9 8 8 Wide Range of Supply Voltages Single Supply . . . 3 V to 36 V or Dual Supplies • Class AB Output Stage • True Differential Input Stage • Low Input Bias Current

TL054A1

Abstract: TL051 TL051 equivalent diode u1d 315
Contextual Info: TL05x, TL05XA, TL05xY ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS _ SLOS178 - FEBRUARY 1997 Direct Upgrades to TL07x and TL08x BiFET Operational Amplifiers Faster Slew Rate 20 V/|js Typ Without Increased Power Consumption • •

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

K2545

Abstract: cx 2808 tlc2652 TLC2652A D3157
Contextual Info: TLC2652, TLC2652A Advanced LinCMOS1 PRECISION CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS D3157, SEPTEMBER 1988 0008, JG, or P PACKAGE Extremely Low Offset Voltage . . 1 nV Max TOP VIEW Extremely Low Change in Offset Voltage with Temperature . . . 0.003nV/°CTyp

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

JFET 4405

Abstract: tle20641
Contextual Info: TLE2064M, TLE2064AM EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE UPOWER QUAD OPERATIONAL AMPLIFIERS D3367, N O V EM B ER 1989 - R E V IS E D O C T O B E R 1991 available features Excellent Output Drive Capability V 0 = ± 2.5 V Min at R L = 100 £2, VCC± = ± 5 V

S1854

Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Contextual Info: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:

723da

Abstract: SNS512 SN7514L
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPES SN5S12, SN5514. SN7512. SN7514 DIFFERENTIAL VIDEO AMPLIFIERS B U L L E T IN N O . D L -S 7 3 1 1496, A U G U S T 1 9 7 1 - R E V IS E D S E P T E M B E R 1973 • 80-MHz Bandwidth • Typical Differential Voltage Amplification of 300

Contextual Info: TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance dj-T of TA8210AH, TA8210AL package designed for low thermal resistance, has a high efficiency of heat radiation.

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

Contextual Info: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A

2SC1557

Abstract: L39C cub vc 150
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C