AMPLIFIER MARKING 4 Search Results

LM358F

Abstract: amplifier K743 marking 43 amplifier marking _1
Contextual Info: SEMICONDUCTOR LM358F MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking 2. Marking No. 2007. 12. 17 1 LM358F 2 K 743 3 Item Marking Description Device Name LM358F Dual Operational Amplifier Trade Name K KEC CORP Lot No. 743 Revision No : 0

Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)

Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

Contextual Info: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package

G3JL

Abstract: GBAD sot 23 r2a
Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS Type Function Marking IC VCEO VEBO mA max V V BC817-25 * amplifier G6A-C 800 45 5 BC847B * amplifier G1E-G 100 45 6 BC848B * amplifier G1J-L 100 30 5 BCW31 AF/HF amplifier GD1 100 32 5 BCW32 AF/HF amplifier

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

amplifier 900mhz

Abstract: amplifier siemens marking RF 98 CGY93P
Contextual Info: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P

BFR90 transistor

Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Contextual Info: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING SOT-523

BFR92R

Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Contextual Info: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23

5252 F ic

Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Contextual Info: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65

transistor mar 823

Abstract: BFR91A BFR91A transistor MAR 637 transistor BFR91A MAR 747
Contextual Info: Tem ic BFR91A Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR91A Marking: BFR91A Plastic case TO 50

MAR 618 transistor

Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Contextual Info: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

Contextual Info: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value

BFR90A

Contextual Info: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50

BFR96TS

Contextual Info: BFR96TS Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96TS Marking: BFR96TS Plastic case TO 50

Contextual Info: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

BFR91A

Abstract: Transistor BFR 91 Transistor BFR 90 application BFR91A transistor RF S-parameters
Contextual Info: BFR 91 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91A Marking Plastic case XTO 50

BFR 970

Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Contextual Info: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50

BFR96

Abstract: BFR96T
Contextual Info: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50

STC945

Abstract: STC733 "Small Signal Amplifier" 10K1 transistor stc945
Contextual Info: STC733 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with STC945 Ordering Information Type NO. Marking