AN-170 NATIONAL Search Results

Dual P-Channel MOSFET

Abstract: g1 TRANSISTOR SMD MARKING CODE
Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

8/S 170 MOSFET TRANSISTOR

Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

NXP SMD TRANSISTOR MARKING CODE s1

Abstract: BSS84AK
Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

transistor smd code marking nc

Contextual Info: SO T6 66 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench

cycolac v100

Abstract: cycolac MARKING EU TC38 V100
Contextual Info: SITO Swedish IT-companies´ Organisation ENVIRONMENTAL DEPARTMENT JANUARY 1997 Eco-declaration AS/400e series, model 170 Increasingly, purchase of personal computers tabletop or portable also involves the environmental aspects of the product. Any comparison between different products is simplified if the product characteristics is defined in an similar way and standardised concepts are used. To meet this, SITO has developed this form for the declaration of the environmental characteristics of personal computers. The

NMC27C010

Contextual Info: NMC27C010 PRELIMINARY O T National À jÌ Semiconductor NMC27C010 Former NMC27C1023 * 1,048,576-Bit (128k x 8) UV Erasable CMOS PROM General Description Features The NMC27C010 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

ALIVH

Abstract: HASL 250 B 340 smd Transistor WLCSP stencil design AN-1112 MARKING CODE SMD IC
Contextual Info: National Semiconductor Application Note 1112 September 2005 Table of Contents Introduction . 2 Package Construction . 2

Eprom B 2716 D

Abstract: NMC27C512AQ250 EPROM NMC27C512A NMC27C256
Contextual Info: NATL SEMICOND MEMORY 31E D bSQUHb QQt i340É PRELIM INARY National Semiconductor '7 '- V ^ - / 3 - 3 7 Features • Clocked sense amps for fast access time down to The NMC27C512A Is a high-speed 512k UV erasable and 150 ns electrically reprogrammable CMOS EPROM, Ideally suited

FPD87346

Abstract: lvds wxga rgb FPD87346VS "FRC"
Contextual Info: October 2003 FPD87346 Low EMI, Low Dynamic Power SVGA XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS ) Outputs General Description Features The FPD87346 is a timing controller that combines an LVDS single pixel input interface with National’s Reduced Swing

27C128

Abstract: 27C256 27C512 NMC27C020
Contextual Info: PRELIMINARY NMC27C020 National Semiconductor NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­

NMC27C512AN

Abstract: NMC27C512ANE250
Contextual Info: NATL SEMICOND MEMORY b S G l l S b DOfc.3412 7 31E I) m National ¿¡A Semiconductor PRELIMINARY ~ 7 -V & ‘ / 3 '< 3 S General Description Features The NMC27C512AN is a high-speed 512k UV one time pro­ grammable CMOS EPROM, Ideally suited for applications

mc27c010

Abstract: NMC27C010 04 ow NMC27C010QE170
Contextual Info: NMC27C010 PRELIMINARY KgM National ÆÆ Semiconductor NMC27C010 Former NMC27C1023 * 1,048,576-Bit (128k x 8) UV Erasable CMOS PROM General Description Features The NMC27C010 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

8F08

Contextual Info: NM27C040 03 Semiconductor National ÆM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

10A18

Contextual Info: NM27P040 S3 National mM Semiconductor NM27P040 4,194,304-Bit 512K x 8 Processor Oriented CMOS EPROM General Description The NM27P040 is a 4096K Processor Oriented EPROM (PORtm) configured as 512K x 8. It’s designed to simplify microprocessor interfacing while remaining compatible with

108362

Contextual Info: NM27C040 SIE D • bSOllEb QQb532b lib « N S C 3 -■ NATL SEMICOND MEMORY - 03 Semiconductor National ÆM NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­

ALIVH

Abstract: national semiconductor pb-free marking AN-1112 JESD51-3 MARKING CODE SMD IC General Semiconductor smd gm 9221 MARKING
Contextual Info: National Semiconductor Application Note 1112 December 18, 2007 Table of Contents Introduction . 2 Package Construction . 2

ALIVH

Abstract: WLCSP smt 250 B 340 smd Transistor WLCSP stencil design AN-1112 national semiconductor pb-free marking 250 micro solder ball 9221 MARKING MARKING SMD IC CODE smd diode ED
Contextual Info: National Semiconductor Application Note 1112 September 9, 2009 Table of Contents Introduction . 2 Package Construction . 2

AN-1112

Abstract: ALIVH PCB design for 0.2mm pitch csp package 250 B 340 smd Transistor JESD51-3 MARKING CODE SMD IC
Contextual Info: National Semiconductor Application Note 1112 January 13, 2010 Table of Contents Introduction . 2 Package Construction . 2

ALIVH

Abstract: AN-1112 AN1112 ALIVH PCB joint JESD51-3
Contextual Info: National Semiconductor Application Note 1112 January 13, 2010 Table of Contents Introduction . 2 Package Construction . 2

"LCD timing controller"

Abstract: FPD87370AXAVS lvds FRC lcd LCD 2004 8bit vga controller vga lcd driver FPD87370AXA VGA GRAPHIC CONTROLLER VEC64A
Contextual Info: November 2004 FPD87370AXA Low EMI, Low Dynamic Power VGA/XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling RSDS Outputs General Description Features The FPD87370AXA is a timing controller that combines an LVDS single pixel input interface with National’s Reduced

Contextual Info: NATL SENICOND -CNENORY} 10E D I bSDiisy aohiST? e | National Semiconductor T -4 6 -1 3-25 - PRELIMINARY NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 Is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

Contextual Info: DS90CF363 National Semiconductor DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link—65 MHz General Description Features The D S90C F363 transmitter converts 21 bits of C M O S/TTL data into three LVDS (Low Voltage Differential Signaling)

Contextual Info: PRELIMINARY April 1999 LM X3162 S ingle Chip Radio Transceiver General Description The LMX3162 Single Chip Radio Transceiver is a monolithic, integrated radio transceiver optimized tor use in ISM 2.45 GHz wireless systems. It is tabricated using National’s ABiC

MF72

Abstract: application note LM3445 lm3445 2061 filter dimmer Triac emc DFLS1200-7 triac dimmer SOD-123 a19 LM3445MM pwm application note jensen series power
Contextual Info: National Semiconductor Application Note 2061 Clinton Jensen August 11, 2010 Introduction istics including EMI/EMC data. The above restrictions for the input voltage are valid only for the demonstration board as shipped with the schematic below. Please refer to the LM3445