AN-870 NATIONAL Search Results

TSFF5510

Contextual Info: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package.

Contextual Info: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR

BPV10NF

Abstract: tshf5
Contextual Info: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR

N861

Abstract: BGO827 bgo827_fc0_sc0 72125
Contextual Info: BGO827; BGO827/FC0; BGO827/SC0 870 MHz optical receivers Rev. 5 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC

BGO807

Abstract: 72125
Contextual Info: BGO807; BGO807/FC0; BGO807/SC0 870 MHz optical receivers Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC

72125

Contextual Info: BGO827; BGO827/FC0; BGO827/SC0 870 MHz optical receivers Rev. 5 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC

SCSI-3 connector

Abstract: VXIPC-87 IEC C13 pinout free circuit diagram of motherboard spy all versa C-15 TNT4882C SERVICE MANUALS TV CHINA MSG60 IEEE Standard 1014-1987 i3 desktop MOTHERBOARD CIRCUIT diagram
Contextual Info: VXI VXIpc 870 Series User Manual VXIpc 870 Series User Manual July 2000 Edition Part Number 322116B-01 Worldwide Technical Support and Product Information www.ni.com National Instruments Corporate Headquarters 11500 North Mopac Expressway Austin, Texas 78759-3504

IEEE Standard 1014-1987

Abstract: vme 7695 VXIPC-87 "VME Backplane" MTBF MDSM-9SC-Z11 Symbios 53C885 53c885 Symbios Logic 53c885 LED Light-emitting diode TNT4882C
Contextual Info: VXI VXIpc 870 Series User Manual VXIpc 870 Series User Manual March 1999 Edition Part Number 322116A-01 Worldwide Technical Support and Product Information www.natinst.com National Instruments Corporate Headquarters 11500 North Mopac Expressway Austin, Texas 78759-3504

Contextual Info:        CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

Contextual Info:        CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

SOT115J

Contextual Info: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 01 — 19 June 2008 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs

Contextual Info: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 02 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs

nxp power microwave transistor

Contextual Info: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 03 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs

CGD944C

Contextual Info: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD944C

Contextual Info: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 02 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

grm188r71c474ka88

Abstract: 1A diode DIODE SG 61A led bulb schematic MR16 led CRCW08050R33F 1N4148W LM3405A MR-16 NSCA1001
Contextual Info: National Semiconductor LM3405A Man Lau October 2007 1.0 Design Specifications Inputs Output #1 VinMin=10.8ACV Vout1=3.8V VinMax=13.2ACV Iout1=0.6A 2.0 Design Description The LM3405A LED driver has been used for this design. It is a current mode control buck switching regulator designed to

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD944C

Contextual Info: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 01 — 6 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD923

Abstract: MGU820
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D848 CGD923 870 MHz, 20 dB gain power doubler amplifier Product specification 2002 Oct 08 NXP Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier FEATURES CGD923 PINNING - SOT115AE • High output capability

2.45GHz magnetron

Abstract: power supply for magnetron NL2555 NL2555-25 oven 2.45GHz magnetron Radmor T-5521 WR430 thermoswitch National Electronics
Contextual Info: NL2555-25 NL2555-15 9/26/90 PAGE 1 0F 2 <§* NATIONAL 870 WATT CW MAGNETRON - 2.45GHZ THIS HIGHLY EFFICIENT, COMPACT CW MAGNETRON WITH INTEGRAL MAGNET IS SUITABLE FOR INDUSTRIAL APPLICATIONS AND CATERING OVENS. THESE MAGNETRONS MEET IEC SAFETY REGULATIONS AND BSI REGULATIONS FOR

DP7310J

Contextual Info: 20-301590-10 REPLACES NATIONAL SEMICONDUCTOR DP7310J .3 DIP WITH TI SN74ACT564DWJ LEAD PACKAGE FEATURES: • Allows placing an SOIC narrow body on a board laid out for an SOWIC (wide body). • Solder masked top side pads allow user to hand solder devices directly to top side of adapter with fewer problems of solder bridging.

Contextual Info: AN11357 BGU8009 Matching Options for 850 MHz / 2400 MHz Jammer Immunity Rev. 1 — 27 May 2013 Application Note Document information Info Content Keywords LNA, GNSS, GPS, BGU8009, WLAN, GSM-850, GSM-900 Abstract This document describes an alternative input matching option for the