SOT115J Search Results

BGY67A

Abstract: DIN45004B
Contextual Info: BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 04 — 14 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

catv amplifier

Abstract: CATV amplifier transistor 6-32UNC-2A BGY687 SC16 5965
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY687 CATV amplifier module Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1995 Sep 11 Philips Semiconductors Product specification CATV amplifier module FEATURES BGY687 PINNING - SOT115J

Contextual Info:        CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD1044H

Contextual Info: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

BGR269

Abstract: DIN45004B
Contextual Info: BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGE787B CATV amplifier module Preliminary specification 2000 Oct 03 Philips Semiconductors Preliminary specification CATV amplifier module BGE787B PINNING - SOT115J FEATURES • Excellent linearity PIN

philips fr 310

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 Philips Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J

bgy887

Contextual Info: DATA SHEET book, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J

Contextual Info: DAT dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J

BGD902L

Contextual Info: Philips Semiconductors Product specification CATV amplifier module BGD902L FEATURES PINNING -SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common

Contextual Info: Philips Semiconductors Product specification CATV am plifier module BGD702D FEATURES PINNING -SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures excellent reliability.

Contextual Info: N AMER bTE D PHILIPS/DISCRETE • bbSB^Bl Q032537 2T0 H A P X Philips Semiconductors Preliminary specification CA TV amplifier module FEATURES BGY885B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: Philips Semiconductors Product specification CATV power doubler amplifier modules FEATURES BGD502; BGD504 PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction

BP317

Abstract: CGY887A DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 CGY887A CATV amplifier module Product specification Supersedes data of 1999 Mar 30 2000 Mar 24 Philips Semiconductors Product specification CATV amplifier module CGY887A FEATURES PINNING - SOT115J • High gain

BGY66B

Abstract: BP317 DIN45004B SC16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY66B CATV amplifier module Product specification Supersedes data of 1995 Sep 11 File under Discrete Semiconductors, SC16 1997 Apr 14 Philips Semiconductors Product specification CATV amplifier module BGY66B PINNING - SOT115J

str 450 a

Abstract: BGY785A BP317 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY785A CATV amplifier module Product specification Supersedes data of 1997 Apr 10 1999 Mar 30 Philips Semiconductors Product specification CATV amplifier module BGY785A FEATURES PINNING - SOT115J • Excellent linearity

CATV amplifier transistor

Abstract: philips hybrid CATV DIN45004B BGY887 BP317
Contextual Info: DATA SHEET book, halfpage M3D252 BGY887 CATV amplifier module Product specification Supersedes data of 1997 Dec 17 1999 Mar 30 Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887 PINNING - SOT115J • Excellent linearity PIN

14433

Abstract: philips catv line amplifier BGE788 DIN45004B
Contextual Info: BGE788 750 MHz, 34 dB gain push-pull amplifier Rev. 04 — 30 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V DC . The module consists of two cascaded stages both in cascode

CGY1047

Contextual Info: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

SOT-115J

Abstract: SOT115J
Contextual Info: PDF: 2004 Feb 05 Philips Semiconductors Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S

florida rf 100 2a

Abstract: n621 6-32UNC-2A BGY887B DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • High gain 2 common • Excellent return loss properties. 3 common 5 +Vß DESCRIPTION

6-32UNC-2A

Abstract: BGD704 DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGD704 PINNING-SOT115J • Excellent linearity PIN DESCRIPTION input 2 common • Rugged construction 3 common • Gold metallization ensures excellent reliability. 5 +vB 7 common

BGY785AD

Abstract: DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGY785AD PINNING -SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures