AN0130 Search Results

EIGHT MOSFET ARRAY

Abstract: Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" 100 Volt mosfet schematic circuit AN0130NA p channel mosfet 100v AN0116 AN0116NA AN0120
Contextual Info: AN0116 AN0132 AN0120 AN0140 AN0130 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information * * † Order Number / Package BVDSS/ BVDGS min RDS(ON) (max) ID(ON) (min) IDSS* @ VDS = 100V Max IDSS* @ VDS = 250V Max 18-Lead Plastic DIP

AN0140N

Contextual Info: 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package B VDSS/ = 18-Lead Plastic Plastic DIP SOW-20* — AN0116NA AN0116WG — — AN0120NA — AN0120ND 25mA — — AN0130NA — AN0130ND 350ft 25mA — 350ÌÌ

EIGHT MOSFET ARRAY

Abstract: octal MOSFET ARRAY MOSFET ARRAY 15 pin pin diagram of MOSFET EIGHT n-channel MOSFET ARRAY 10X10 AN0130NA mosfet array
Contextual Info: A T & T MELEC I C 2SE D • 0050021a 00028*45 4 ■ OCTAL HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY_ AN0130NA PRELIMINARY ~T-*43-25 Monolithic N-Channel Enhancement-Mode Description The AN0130NA Octal High-Voltage N-Channel MOSFET Array contains eight N-Channel DMOS drivers configured

Teledyne Semiconductor

Abstract: AN0110N AN0110NA AN0120N AN0120NA AN0130N AN0130NA AN0140N AN0140NA AN01-10
Contextual Info: 2ÖE D TELEDYNE COMPONENTS • öTlTbOE QQQtabT 7 WÊ î î S ' S ü * îg j“ H AN0130N, AN0140N SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION AN0110NA 100V,100Q 18 Pin Plastic DIP Description each channel AN0120NA

Contextual Info: TELEDYNE 2ÖE D C O MP O N E NT S • aT17t.02 QQQbaLT 7 _ ■ ANOllON, AN0120N AN0130N, AN0140N tÏT ,IC3H=üÆ\ 5 Z SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS 7 ORDERING INFORMATION 18 Pin Plastic DIP DtscriptIon each channel AN0110NA

P-DIP18P

Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
Contextual Info: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

AN0142

Abstract: AN0141 SMF-28 fiber bookham receiver laser bookham LMC10 MZ-modulator AN0117 80C08C 10Gb/s Compact InP MZ Modulator laser driver DFB wavelength locker
Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10ZEG Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s

Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEJ Negative Chirp - High Power The LMC10NEJ product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10

Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10

EIGHT MOSFET ARRAY DIP-18

Abstract: AN0116NA AN0116NB AN0116ND AN0116WG AN0120NA AN0120NB AN0130NA AN0130NB SOW-20
Contextual Info: SUPERTEX INC Dl D Ì 07735^5 DDQ17SÖ 0 f * AN01 8 Channel Power M O SFET Array Monolithic N-channel Enchancement Mode Ordering Information b v dss/ ^D SfO N ) min) 160V 200V 300V 320V 400V (max) 350Q 3000 300n 350n 350Q JI b v dqs <3>V’ d s. = 100V Max

etalon wavelength locker

Abstract: DIODE 8069 etalon locker Diode BFM bookham MZ modulator
Contextual Info: Preliminary 10Gb/s Compact InP MZ Modulator with DWDM Laser Features LMC10ZEG • Suitable for 50GHz ITU applications with +/-20pm λ accuracy over life Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero

0X279

Abstract: Ethernet Controller with Plug and Play
Contextual Info: How to Perform Plug and Play I nitiation Key with PC net-I S A+ Application Note TITLE: How to perform Plug and Play Initiation Key with PCnet-ISA+. KEYWORDS: Am79C961, PnP, plugplay, auto-config, wakeup, software, ISA. PRODUCT: Am79C961 PCnet-ISA+ Jumperless Single-Chip Ethernet

bookham receiver laser

Abstract: laser wavelength locker optical Driver MZ bookham MZ modulator
Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10ZEG Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s

bookham MZ modulator

Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10ZEG Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s

AK6416A

Abstract: AK93C12A AK93C10 Hex schmitt trigger ecl NATIONAL LINEAR VOL2 AK93C10AF NATIONAL LINEAR VOL1 93c45a AN0050
Contextual Info: DATASHEET Microwire type . SCI type Serial Communication Interface . I2C™ type . DAC+EEPROM .

s2914a

Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
Contextual Info: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .

bookham LMC10

Abstract: Optical Crossing etalon locker optical modulator driver for Mach-Zehnder modulated optical modulator driver for Mach-Zehnder module bookham MZ modulator
Contextual Info: 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEJ Negative Chirp - High Power The LMC10NEJ product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

8 Channel Power Mosfet Array

Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
Contextual Info: SUPERTEX INC Dl dÌ J 07735*15 DDQ17SÖ Q 7 ~ V ^ ^ 5 ~ AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information Order Number / Package b v dss/ 1 * V DS = BVd0S min ^D S {O N ) ' d (ON) (max) (min) 100V Max 1nA 'D SS

bookham LMC10

Abstract: mach zehnder interferometer MZ-modulator laser chirp parameter nrz optical modulator schematic voltage regulated multi 30 volts bookham InP Mach-Zehnder modulator with filter MACH-ZEHNDER bookham TX laser
Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEJ Negative Chirp - High Power The LMC10NEJ product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10

Diode BFM

Abstract: bookham modulator
Contextual Info: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEJ Negative Chirp - High Power The LMC10NEJ product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10

HPM hifn

Abstract: dell 745 DELL PPC970 ppc970 ibm OPT800 795* HIFN meterflow dell 1530 hifn lzs
Contextual Info: Hifn Pattern Match 2.0 Performance Application Note Intelligent Secure Networking Hifn Confidential . AN-0130-03, 2006, Hi/fn , Inc. All rights reserved. 11/06 No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or

optical Driver MZ

Abstract: fiber interferometer bias control etalon wavelength locker AN0136 bookham receiver laser
Contextual Info: 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and