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    AN5000 PRINCIPLE OF RATING Search Results

    AN5000 PRINCIPLE OF RATING Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    74167N
    		Rochester Electronics LLC 74167 - Sync Decade Rate Multipliers Visit Rochester Electronics LLC Buy
    CD4089BNSR
    		Texas Instruments CMOS Binary Rate Multiplier 16-SO -55 to 125 Visit Texas Instruments Buy

    AN5000 PRINCIPLE OF RATING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GP800

    Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
    Contextual Info: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		GP800DCS18 DS5221-4 DS5221-5 GP800 AN4508 AN4502 AN4503 AN4505 GP800DCS18 dc chopper circuit application PDF

    AN4502

    Abstract: AN4503 AN4505 GP800FSS18
    Contextual Info: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		GP800FSS18 DS5261-2 DS5261-3 AN4502 AN4503 AN4505 GP800FSS18 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800NSM33
    Contextual Info: GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 3300V Rating ■ 800A Per Module


    Original     		GP800NSM33 DS5372-2 AN4502 AN4503 AN4505 AN4506 GP800NSM33 PDF

    723 ic internal diagram

    Abstract: AN4502 AN4503 AN4505 GP800DDS18
    Contextual Info: GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Arm


    Original     		GP800DDS18 DS5165-4 DS5165-5 723 ic internal diagram AN4502 AN4503 AN4505 GP800DDS18 PDF

    DS5306-2

    Abstract: IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 GP400LSS12 AN5000 principle of rating
    Contextual Info: GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000


    Original     		GP400LSS12 DS5306-1 DS5306-2 GP400LSS12 IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 AN5000 principle of rating PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 AN4507 GP401DDM18 K1p TRANSISTOR
    Contextual Info: GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE SAT IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES • Low VCE(SAT) ■ 400A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		GP401DDM18 DS5397-1 AN4502 AN4503 AN4505 AN4506 AN4507 GP401DDM18 K1p TRANSISTOR PDF

    AN4502

    Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
    Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001


    Original     		GP2401ESM18 DS5345-1 DS5345-2 AN4502 AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module PDF

    723 ic internal diagram

    Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
    Contextual Info: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)


    Original     		GP1201FSS18 DS5411-1 GP1201FSS18 723 ic internal diagram AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM18
    Contextual Info: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP2400ESM18 DS5406-1 GP2400ESM18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Contextual Info: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


    Original     		GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358 PDF

    GP801DCM18

    Abstract: AN4502 AN4503 AN4505 AN4506
    Contextual Info: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		GP801DCM18 DS5365-3 GP801DCM18 AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DCM18
    Contextual Info: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP800DCM18 DS5363-3 GP800DCM18 an1800V, AN4502 AN4503 AN4505 AN4506 PDF

    AN4502

    Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
    Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		GP200MLK12 GP200MKS12 DS5448-1 AN4502 AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190 PDF

    K1p TRANSISTOR

    Abstract: AN4502 AN4503 AN4505 GP1600FSM18
    Contextual Info: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001


    Original     		GP1600FSM18 DS5361-1 DS5361-2 GP1600FSM18 K1p TRANSISTOR AN4502 AN4503 AN4505 PDF

    DS51764

    Abstract: AN4502 DS5176-4 AN4503 AN4505 GP1600FSS18
    Contextual Info: GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per Module DS5176-4.2 January 2001 KEY PARAMETERS


    Original     		GP1600FSS18 DS5136-3 DS5176-4 GP1600FSS18 DS51764 AN4502 AN4503 AN4505 PDF

    AN4502

    Abstract: AN4503 AN4505 GP801DDM18
    Contextual Info: GP801DDM18 GP801DDM18 Hi-Reliability Dual Switch Low VCE SAT IGBT Module Replaces October 2000, version DS5292-2.5 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		GP801DDM18 DS5292-2 DS5292-3 AN4502 AN4503 AN4505 GP801DDM18 PDF

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421
    Contextual Info: GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES • Internally Configured With Lower Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		GP200MLS12 DS5421-1 AN4502 AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421 PDF

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


    Original     		GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503 PDF

    GP801DDS18

    Abstract: AN4502 AN4503 AN4505 DS235-3
    Contextual Info: GP801DDS18 GP801DDS18 Dual Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS235-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 800A Per Arm APPLICATIONS


    Original     		GP801DDS18 DS235-3 DS5235-4 GP801DDS18 AN4502 AN4503 AN4505 PDF

    AN4503

    Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
    Contextual Info: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		GP1200FSM18 DS5410-1 GP1200FSM18 AN4503 AN4502 AN4505 AN4506 AN5000 PDF

    AN4503

    Abstract: AN4502 AN4505 GP1200FSS18
    Contextual Info: GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module DS5260-3.1 January 2001 KEY PARAMETERS


    Original     		GP1200FSS18 DS5260-2 DS5260-3 GP1200FSS18 AN4503 AN4502 AN4505 PDF

    AN4502

    Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
    Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		GP401LSS18 DS5288-1 GP401LSS18 AN4502 AN4503 DSA0018823 ups sine wave inverter circuit diagram PDF

    AN4502

    Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
    Contextual Info: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001


    Original     		GP1601FSS18 DS5248-3 DS5248-4 AN4502 AN4503 AN4505 GP1601FSS18 PDF

    DS5401-1

    Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
    Contextual Info: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		GP801FSM18 DS5401-1 GP801FSM18 basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 DS5401 PDF