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    AN4502

    Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
    Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP401LSS18 DS5288-1 GP401LSS18 AN4502 AN4503 DSA0018823 ups sine wave inverter circuit diagram

    AN4502

    Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
    Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		PDF GP200MLK12 GP200MKS12 DS5448-1 AN4502 AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


    Original     		PDF GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP400DDS18
    Text: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)


    Original     		PDF GP400DDS18 DS5359-2 GP400DDS18 AN4502 AN4503 AN4505 AN4506

    AN5190

    Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
    Text: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ


    Original     		PDF GP200MHS12 GP200MHB12S DS4339-5 DS5296-1 GP200MHS12 AN5190 AN4502 AN4503 AN4508

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


    Original     		PDF GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
    Text: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP2400ESM12 DS5360-1 GP2400ESM12 AN4502 AN4503 AN4505 AN4506 S2400A MAX4800A

    AN450

    Abstract: AN4502 AN4503 AN4505 GP800FSS12
    Text: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar


    Original     		PDF GP800FSS12 DS5239-2 DS5239-3 GP800FSS12 AN450 AN4502 AN4503 AN4505

    AN4502

    Abstract: AN4503 AN4505 GP800DDS12 basic single phase ac motor reverse forward circuit diagram
    Text: GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP800DDS12 DS5172-3 DS5172-4 GP800DDS12 AN4502 AN4503 AN4505 basic single phase ac motor reverse forward circuit diagram

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP400DDS12
    Text: GP400DDS12 GP400DDS12 Powerline N-Channel Dual Switch IGBT Module DS5341-1.1 February 2000 The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage applications


    Original     		PDF GP400DDS12 DS5341-1 GP400DDS12 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 AN4505 GP1600FSS12 set igbt on off Vge DS5173-4
    Text: GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP1600FSS12 DS5173-3 DS5173-4 GP1600FSS12 AN4502 AN4503 AN4505 set igbt on off Vge

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421
    Text: GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES • Internally Configured With Lower Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		PDF GP200MLS12 DS5421-1 AN4502 AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421