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    ANTIMONY TRIOXIDE EPOXY MOLDING Search Results

    ANTIMONY TRIOXIDE EPOXY MOLDING Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC023
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.19 V / tf=170 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA014
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    ANTIMONY TRIOXIDE EPOXY MOLDING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    antimony trioxide epoxy molding

    Abstract: material declaration semiconductor package Material declaration organic materials oxygen material declaration amd 104 c1k
    Contextual Info: ‹ Chapter 4 Package Materials Material Declaration Data Sheets. AMD has created material data sheets for some of its more popular package designs. These data sheets are organized as follows: • Suface-Mount Array Packages Š PBGA, page 6-19 • Surface-Mount Leaded Packages


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    D2863-70

    Contextual Info: Product Safety Information Sheet This should be read in conjunction with the Product Data Sheet. Failure to observe the ratings and the information on this sheet may result in a safety hazard. 1. Material Content Solid tantalum capacitors do not contain liquid hazardous


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    AVX taa

    Abstract: avx taj D2863-70 AVX tantalum MSL
    Contextual Info: Product Safety Information Datasheet Material Data and Handling This should be read in conjunction with the Product Datasheet. Failure to observe the ratings and the information on this sheet may result in a safety hazard. 1. Material Content Solid Tantalum and OxiCap capacitors do not contain


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    AVX tantalum MSL

    Abstract: avx taj AVX taa D2863-70
    Contextual Info: Product Safety Information Datasheet Material Data and Handling This should be read in conjunction with the Product Datasheet. Failure to observe the ratings and the information on this sheet may result in a safety hazard. 1. Material Content Solid Tantalum and OxiCap capacitors do not contain


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    antimony trioxide epoxy molding

    Abstract: avx capacitors
    Contextual Info: Product Safety Information Sheet Material Data and Handling This should be read in conjunction with the Product Data Sheet. Failure to observe the ratings and the information on this sheet may result in a safety hazard. 1. Material Content Solid tantalum capacitors do not contain liquid hazardous


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    D2863-70

    Abstract: AVX Tantalum AND Niobium OXIDE DIODES
    Contextual Info: Product Safety Information Datasheet Material Data and Handling This should be read in conjunction with the Product Datasheet. Failure to observe the ratings and the information on this sheet may result in a safety hazard. 1. Material Content Solid Tantalum and OxiCap capacitors do not contain


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    CD0603

    Contextual Info: MATERIAL DECLARATION SHEET Material Number CD0603 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 2 3 4 5 Construction Element subpart FR-5 BOARD Wafer Al Wire Silver paste Molding Compound Headquarters Riverside CA


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    CD0603 PDF

    CD1005

    Abstract: material declaration sheet Diode PT 520 diode 1436
    Contextual Info: MATERIAL DECLARATION SHEET Material Number CD1005 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 2 3 4 5 Construction Element subpart FR-5 BOARD Wafer Al Wire Silver paste Molding Compound Headquarters Riverside CA


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    CD1005 material declaration sheet Diode PT 520 diode 1436 PDF

    silver epoxy

    Contextual Info: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the life span of their products comes to an end by scrutinizing the materials incorporated and their


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    07-Aug-03 silver epoxy PDF

    Si3N4

    Abstract: antimony trioxide epoxy molding TELEFUNKEN catalog
    Contextual Info: Vishay Telefunken The Constituents of Semiconductor Components Document Number 82601 05.01 www.vishay.com 1 Vishay Telefunken Table of Contents The Constituents of Semiconductor Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    cd photo diode

    Abstract: class H epoxy resin gold detector IC material composition of chip capacitors ic 555 use with metal detector epoxy resin lead frame resin compound copper bond wire CNY64
    Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


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    Contextual Info: SOT23 Diodes Material Content Declaration Material name Substance name e.g. Copper Cu , Gold (Au) Lead Frame Copper (Cu) 30.94% CAS no., if known Iron (Fe) 7439-89-6 Cobalt (Co) 7440-48-4 Silver (Ag) 7440-22-4 7440-02-0 Total 7440-21-3 Gold (Au) 7440-57-5


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    Sil89 PDF

    Titanium dioxide

    Abstract: carbon ink
    Contextual Info: MATERIAL DECLARATION SHEET Material Number PWR263020XXX Product Line Power Resistor Compliance Date RoHS Compliant No. 1 2 3 4 5 yes Construction Element subpart Housing Back Plate Terminal Solder Substrate Headquarters Riverside CA MSL Homogeneous Material


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    PWR263020XXX Titanium dioxide carbon ink PDF

    80110

    Abstract: TCST1000 CNY70 TCPT1200 TCST1030 TCST1210 TCST1230 TCST5123 TCST5250 TCUT1200
    Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


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    40039

    Abstract: SOD-523 DO-219AB Germanium DO-35 DIODE 89901 cd 4553 material declaration vishay asbestos DO-219AB germanium diode SOD323
    Contextual Info: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


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    LLP-75 06-May-04 40039 SOD-523 DO-219AB Germanium DO-35 DIODE 89901 cd 4553 material declaration vishay asbestos DO-219AB germanium diode SOD323 PDF

    material declaration semiconductor package

    Abstract: asbestos safety material declaration vishay 89901 DO-219AB 58018
    Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


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    LLP-75 06-May-04 material declaration semiconductor package asbestos safety material declaration vishay 89901 DO-219AB 58018 PDF

    Contextual Info: Product Safety Information Datasheet Material Data and Handling This should be read in conjunction with the Product Datasheet. Failure to observe the ratings and the information on this sheet may result in a safety hazard. 1. Material Content Solid Tantalum and OxiCap capacitors do not contain


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    material declaration vishay

    Abstract: asbestos safety TbA 8220 m CAS No. 28064-14-4 DO-214 diode 84084 material declaration semiconductor package sot-363 Package material 28064-14-4 40039
    Contextual Info: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


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    LLP-75 29-Apr-04 material declaration vishay asbestos safety TbA 8220 m CAS No. 28064-14-4 DO-214 diode 84084 material declaration semiconductor package sot-363 Package material 28064-14-4 40039 PDF

    Contextual Info: RF2436 RF2436Transmit/Receive Switch TRANSMIT/RECEIVE SWITCH Package Style: SOT-5 Features      Single Positive Power Supply Low Current Consumption 1dB Insertion Loss at 900MHz 24dB Crosstalk Isolation at 900MHz +27dBm Output P1dB RX OUT 1


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    RF2436Transmit/Receive RF2436 900MHz 900MHz 27dBm RF2436 28dBm 2500MHz. 2002/95/EC DS120416 PDF

    HALON 2402

    Abstract: HSOP-30 CFC-217 CFC2-15
    Contextual Info: Product Chemical Content Brochure BRD8022/D Rev. 1, Feb–2002  SCILLC, 2002 Previous Edition  2001 “All Rights Reserved” Introduction Dear Customer: ON Semiconductor is proud to introduce its first Product Chemical Content brochure for its products. This information


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    BRD8022/D r14525 HALON 2402 HSOP-30 CFC-217 CFC2-15 PDF

    Ta2O5 phase diagram

    Abstract: EIA-535 Ta2O5
    Contextual Info: TBJ Series Including CWR11 and COTS-Plus The TBJ Series encompasses five case sizes, A through E, corresponding to EIA535BAAC, the commercial industry standard. This series also offers molded body/compliant termination construction, polarity and capacitance marking. The


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    CWR11 EIA535BAAC, Ta2O5 phase diagram EIA-535 Ta2O5 PDF

    Contextual Info: NBB-312 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz Package: MPGA, Bowtie, 3 x 3, Ceramic Features      Pin 1 Indicator Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation 50 I/O Matched for High


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    NBB-312 12GHz NBB-312 2002/95/EC DS140418 PDF

    rfmd mmic

    Contextual Info: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package: MPGA, Bowtie, 3 x 3, Ceramic Features      Pin 1 Indicator Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation 50 I/O Matched for High


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    NBB-312 12GHz NBB-312 2002/95/EC DS120130 rfmd mmic PDF

    CFC-211

    Contextual Info: Product Chemical Content Brochure BRD8022/D Rev. 2, Jun–2002  SCILLC, 2002 Previous Edition  2002 “All Rights Reserved” http://onsemi.com Introduction Dear Customer: ON Semiconductor is proud to introduce its first Product Chemical Content brochure for its products. This information


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    BRD8022/D r14525 BRD8022/D CFC-211 PDF