AO4447A Search Results
AO4447A Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AO4447A | Alpha & Omega Semiconductor | Load Switch - 30V P-Channel MOSFET | Original | 305.94KB | 5 | ||
AO4447A_102 | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET | Original | 375.99KB |
AO4447A Price and Stock
Alpha & Omega Semiconductor AO4447AMOSFET P-CH 30V 17A 8SOIC |
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AO4447A | Digi-Reel | 2,478 | 1 |
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AO4447A | Cut Strips | 118 | 16 Weeks | 1 |
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AO4447A | 1,443 | 1 |
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AO4447A | 50,365 |
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AO4447A | 33,133 |
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Alpha & Omega Semiconductor AO4447ALMOSFET P-CH 30V 17A 8SOIC |
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AO4447AL | Reel |
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AO4447AL | 33 |
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AO4447AL | 26 |
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AO4447AL | 255 |
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Others AO4447AAVAILABLE EU |
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AO4447A | 1,875 |
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Alpha & Omega Semiconductor AO4447AL_104Transistors |
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AO4447AL_104 | 307 |
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AO4447A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
Original |
AO4447AL AO4447AL | |
Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
AO4447A AO4447A | |
AO4447AContextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A |
Original |
AO4447A AO4447A | |
Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
AO4447A AO4447A | |
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
Original |
AO4447AL AO4447AL | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 |