AO4800 Search Results

AO4800B

Contextual Info: AOS Semiconductor Product Reliability Report AO4800B/AO4800BL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Oct 15, 2007 1 This AOS product reliability report summarizes the qualification result for AO4800B. Accelerated

ao4800

Contextual Info: AOS Semiconductor Product Reliability Report AO4800/AO4800L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Jul 14, 2005 1 This AOS product reliability report summarizes the qualification result for AO4800. Accelerated

AO4800B

Contextual Info: AO4800B 30V General Description Dual N-Channel MOSFET Product Summary The AO4800B uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

AO4800B

Abstract: AO4800BL
Contextual Info: AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800B/L uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

ao4800b

Abstract: AO4800BL
Contextual Info: AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800B/L uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

AO4800B

Contextual Info: AO4800B 30V General Description Dual N-Channel MOSFET Product Summary The AO4800B uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

D69A

Abstract: AO4800A AO4800AL
Contextual Info: AO4800A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800A uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

AO4800B

Contextual Info: AO4800B 30V General Description Dual N-Channel MOSFET Product Summary The AO4800B uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

Contextual Info: AO4800 30V Dual N-Channel MOSFET General Description Product Summary The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

AO4800

Contextual Info: AO4800 30V Dual N-Channel MOSFET General Description Product Summary The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

AO4400

Abstract: AO4401 AO4800
Contextual Info: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in

Contextual Info: AO4800B Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800B uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

Contextual Info: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

ao4800

Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Contextual Info: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

963L-2

Abstract: 760GX quanta SiS302ELV LM393 VDD63 nec pc123 quanta BL RTM360 MCL F 108 T4-1
Contextual Info: 1 2 3 KH2 MLB 4 5 6 7 8 01 CPU Thermal AMD Athlon 64 Block Diagram Thermal sensor & Fan SMT uPGA754 A A 1.6G MB/s DDR 2700MB/s 166MHz Memory CRT CRT DDC2B 1x D-SUB 15-Pin NB Local Frame Buffer SISM760 DDR 2700MB/s (166MHz) LVDS Transmitter VB 12bit LCD LVDS

M7602

Abstract: VDDIO10 RTM360-755R 963L-2 M760LV rtm360 MAX1632AEAI nec pc123 quanta quanta computer
Contextual Info: 1 2 3 KH1 MLB 4 5 6 7 8 01 CPU Thermal AMD Athlon 64 Block Diagram Thermal sensor & Fan SMT uPGA754 A A 1.6G MB/s DDR 2700MB/s 166MHz Memory CRT CRT DDC2B 1x D-SUB 15-Pin NB Local Frame Buffer SISM760 DDR 2700MB/s (166MHz) LVDS Transmitter VB 12bit LCD LVDS

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

Contextual Info: Evaluation board available SINGLE SUPPLY SYNCHRONOUS PWM CONTROLLER WITH FIXED 5V OUTPUT AND 3.3V/700mA LDO Pb Free Product FEATURES DESCRIPTION The NX2837 controller IC is a single power supply synchronous Buck controller IC designed for step down DC to DC converter applications. NX2837 is optimized to

AO4403

Abstract: 4801 soic8 AO4400
Contextual Info: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

FZ 75 capacitor 1500 6.3V

Abstract: NX2837 m2a MARKING SOT-23 ic ao4800 FZ 4 1000Uf 6.3V 1000uf, 16v electrolytic capacitor "FZ 54" electrolytic capacitor 1000uf 63V electrolytic capacitor
Contextual Info: Evaluation board available SINGLE SUPPLY SYNCHRONOUS PWM CONTROLLER WITH FIXED 5V OUTPUT AND 3.3V/700mA LDO Pb Free Product FEATURES DESCRIPTION The NX2837 controller IC is a single power supply synchronous Buck controller IC designed for step down DC to DC converter applications. NX2837 is optimized to

AO4401

Abstract: ao4800
Contextual Info: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM