AO8816 Search Results

AO8816 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO8816		Alpha & Omega Semiconductor	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
AO8816L		Alpha & Omega Semiconductor	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF

AO8816 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AO8816 Contextual Info: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO8816 AO8816	PDF
Contextual Info: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO8816 AO8816	PDF
Contextual Info: Rev 0: July 2004 AO8816, AO8816L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This	Original	AO8816, AO8816L AO8816 AO8816L	PDF
AO8816 Abstract: AO8816L Contextual Info: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO8816 AO8816 AO8816L AO8816L	PDF
AO4832 Abstract: AO4832L AO8816 Contextual Info: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a	Original	AO4832 AO4832 AO4832L AO8816	PDF