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Alpha & Omega Semiconductor AON3814 MOSFET 2N-CH 20V 8DFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AON3814	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.25934	Buy Now
TME	AON3814				3	1 - 10 $0.505 100 $0.4 1000 $0.356 10000 $0.327	Get Quote
Alpha & Omega Semiconductor AON3814L MOSFET 2N-CH 20V 6A 8DFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AON3814L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

AON3814 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
AON3814		Alpha & Omega Semiconductor	Battery Protection - 20V N-Channel MOSFET		Original	PDF	374.94KB	5
AON3814		Alpha & Omega Semiconductor	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF	122.15KB	4

AON3814 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.	Original	AON3814 AON3814	PDF
Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.	Original	AON3814 AON3814	PDF
AON3814 Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.	Original	AON3814 AON3814	PDF
Contextual Info: AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable	Original	AON3814 AON3814	PDF
AON3814L Abstract: AON3814 AON3814/L Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.	Original	AON3814 AON3814/L AON3814 AON3814L -AON3814L	PDF
AON3814 Contextual Info: AON3814 20V N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable	Original	AON3814 AON3814	PDF
Contextual Info: AON3814 20V N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable	Original	AON3814 AON3814	PDF
AON6704L Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower	Original	O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025	PDF
AO4946 Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466 Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22	Original		PDF