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    Alpha & Omega Semiconductor AON5802BL

    MOSFET 2N-CH 30V 7.2A 6DFN
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    AON5802BL Datasheets Context Search

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    AON5802BL

    Abstract: AON5802B
    Contextual Info: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V


    Original     		AON5802B AON5802B/L AON5802B AON5802BL -AON5802BL S0001 PDF

    Contextual Info: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX)


    Original     		AON5802B AON5802B/L AON5802B AON5802BL -AON5802BL PDF

    Contextual Info: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V


    Original     		AON5802B AON5802B/L AON5802B AON5802BL -AON5802BL 1E-04 PDF