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    AOT430

    Abstract: AOTF470
    Text: AOTF470 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF470 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		PDF AOTF470 AOTF470 O-220F 100ms AOT430

    Untitled

    Abstract: No abstract text available
    Text: AOT470/AOTF470 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT470/AOTF470 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose


    Original     		PDF AOT470/AOTF470 AOT470/AOTF470 O220F) AOT470 O-220 AOTF470 O-220F

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025