AP AMP MOS Search Results

KELVIN-VARLEY DIVIDER

Abstract: OFM-1A DP311 ofm1a FN507
Contextual Info: L irm LT1008 TECHNOLOGY Picoamp Input Current, M icrovolt Offset, Low Noise Op Amp FCflTURCS • ■ ■ ■ ■ ■ ■ ■ DCSCfflPTIOn Guaranteed Bias Current The LT1008 is a universal precision operational ampli­ fier which can be used in practically all precision ap­

Contextual Info: TH IS DRAWING IS UNPUBLISHED. § RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ .19 D isr LOC DO NOT S CALE raGHTS RESERVED. REVISIONS AP DO NOT EXCEPT DATE REVISED BY ECLBOO-120/01 R E V IS E BY DESCRIPTION LTR 29JUN01 HL PLF C AD 1 .8 ±0.1

Contextual Info: 1 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED BY 19 AMP IN COR PO RA TE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES E R V E D . AF DI ST REVISIONS 50 DESCRIPTION LT R REVISED STATUS PER 0G3A-0678-0C) DATE DWN AP VD 260CT00

Contextual Info: APÉX M i C R O T E C H K O L O G Y PREC ISIO N M A G N E TIC DEFLECTIO N APPLICATION NOTE 5 P O W E R O P E R A T IO N A L A M P L IF IE R H TT P : / / W W W . A P EX MI C R0 T E C H . C 0 M 800 546-APEX (800) 546-2739 INTRODUCTION Closed loop power op amp circuits offer distinct advantages in

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

AP 309

Abstract: sn 76545 CRYSTAL s173 2 396 s170 S223 S72 MOS S100 S101 S240
Contextual Info: PRELIMINARY PRODUCT INFORMARTION MOS INTEGRATED CIRCUIT µ PD161830 240-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES DESCRIPTION The µ PD161830 is a source driver for TFT-LCDs supporting 64 gray-scale display and can operate with a supply

DHO 165 equivalent

Abstract: dYNAMIC mIC pre amp ICs
Contextual Info: ICs for Telephone AN6472NFBP Cordless Telephone Speech Network IC Incorporating Cross-Point Switch • Overview Unit : mm The AN6472NFBP is a speech network IC which includes a receiver noise reducing function and is most suitable for quality cordless telephones. It incorporates a

Contextual Info: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £ P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"to process features gold metal for greatly extended

Contextual Info: polyfet rf devices L2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended

MTE Contactor

Abstract: CAP-348TP CAP-347TP CAP-346TP MAPP0021D MAPP0034C MAPP0786D capacitor 400v wiring diagram contactor 40 amp 3 phase MAPP0128D
Contextual Info: Matrix AP 400V – 690V TECHNICAL REFERENCE MANUAL FORM: MAP-TRM-E REL. October 2014 REV. 018 2014 MTE Corporation High Voltage! Only a qualified electrician can carry out the electrical installation of this filter. WARNING Quick Reference ❶ Selection Guide

Contextual Info: polyfet rf devices F1206 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features

Contextual Info: polyfet rf devices F2202 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet”1"1 process features gold metal for greatly extended

s357

Abstract: crystal S333 s276 pin diagram for IC 4580 S355 switch ic 7420 data sheet s307 S394 s314 S359
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161602A/B 360/396-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES DESCRIPTION The µ PD161602A/B is a source driver for TFT-LCDs supporting 64 gray-scale display and can operate with a supply voltage of 2.5 V for the logic block and 5.0 V for the driver block. Data input as 6-bit x 3-dot digital data is

agc circuit use op amp

Abstract: AN2050FB QFP044-P-1010 10MHz agc circuit video clamp agc
Contextual Info: AN2050FB CCD Monochrome Video Camera Signal Processor IC • Overview Unit:mm The AN2050FB is an integrated circuit specified to the monochrome CCD image element which is employed in the monitoring video cameras, door phones, TV telephone sets, etc. The high frequency block and

Contextual Info: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1060 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fip package: Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

PD69104

Abstract: PD69108 PD69104A Solar Garden Light Controller 4 pin LX5535 lx6503 PD69100 lx6523a LX5518 LX1980
Contextual Info: Microsemi • Microsemi • Microsemi • Microsemi Analog Mixed Signal Group The vision of Microsemi’s Analog Mixed Signal Group AMSG is to engineer high performance power management products differentiated for the most demanding applications. The technical teams

active harmonic filter dspic

Abstract: MCP6001 MCP6141 PIC32 8th order lowpass butterworth filter Active Band-pass Filter with carrier frequency
Contextual Info: Mindi Active Filter Designer User’s Guide 2008 Microchip Technology Inc. DS51666B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5832 FT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and

AP 4100 AA V1.3

Abstract: S357 S85 452 s276 S217 S186 S87 452 s363 S227 S368
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD161602A/B 360/396 出力 TFT-LCD 用ソース・ドライバ（64 階調） µ PD161602A/B は，64 階調表示対応の TFT-LCD 用ソース・ドライバで，ロジック：2.5 Ｖ，ドライバ：5.0 V の電

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mospec s20c45

Abstract: S20C45 S20C S20C30 S20C50 S20C60
Contextual Info: Sk MOSPEC S20C30 Thru S20C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS U sing th e S ch o ttky B a rrie r p rin c ip le w ith a M o lyb d e n u m b a rrie r m etal. T h e se s ta te -o f-th e -a rt g e o m e try fe a tu re s ep ita xia l co n s tru c tio n w ith o xid e p a s s iv a tio n and m etal o ve rla y contact.