AP30G120 Search Results

AP30G120 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
AP30G120ASW		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF	96.94KB	4
AP30G120BSW-HF		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF	97.87KB	4
AP30G120CSW-HF		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF	97.89KB	4
AP30G120SW		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF	95.49KB	3
AP30G120SW		Alpha & Omega Semiconductor	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF	98.24KB	3
AP30G120W		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR		Original	PDF	74.85KB	3

AP30G120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage VCE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free	Original	AP30G120CSW-HF Fig11.	PDF
Contextual Info: AP30G120BSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage VCE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free	Original	AP30G120BSW-HF Fig11.	PDF
Contextual Info: AP30G120SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Complian IC	Original	AP30G120SW Fig11.	PDF
Contextual Info: Advanced Power Electronics Corp. AP30G120SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 3.0V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package	Original	AP30G120SW-HF-3 AP30G120S 30G120SW	PDF
AP30G120SW Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P Contextual Info: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant	Original	AP30G120SW Fig11. AP30G120SW AP30G120 ictc 500V N-Channel IGBT TO-3P	PDF
Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C	Original	AP30G120W Fig11.	PDF
Contextual Info: AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage VCE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant & Halogen-Free IC	Original	AP30G120CSW-HF Fig11.	PDF
Contextual Info: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C	Original	AP30G120SW Fig11.	PDF
Contextual Info: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C	Original	AP30G120ASW Fig11.	PDF
v120t Abstract: AP30G120W Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1200V IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package 30A C G ▼ RoHS Compliant	Original	AP30G120W Fig11. v120t AP30G120W	PDF
ap30g120w Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1100V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G ▼ RoHS Compliant	Original	AP30G120W Fig11. ap30g120w	PDF
30G120ASW Contextual Info: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package	Original	AP30G120ASW-HF-3 AP30G120AS 30G120ASW 30G120ASW	PDF
Contextual Info: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E	Original	AP30G120W-HF-3 100oC AP30G120 30G120W	PDF
AP30G120ASW Abstract: AP30G120 VCE-12 500V N-Channel IGBT TO-3P Contextual Info: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant IC	Original	AP30G120ASW Fig11. AP30G120ASW AP30G120 VCE-12 500V N-Channel IGBT TO-3P	PDF