AP60T10GS Search Results
AP60T10GS Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP60T10GS | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 94.61KB | 4 |
AP60T10GS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AP60T10GS
Abstract: MOSFET VDS 20V TO-220
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Original |
AP60T10GS/P O-220 O-263 AP60T10GP) 100us 100ms AP60T10GS MOSFET VDS 20V TO-220 | |
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Contextual Info: AP60T10GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 18mΩ ID G 67A S Description Advanced Power MOSFETs from APEC provide the |
Original |
AP60T10GS/P-HF O-263 AP60T10GP) O-220 100us 100ms | |
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Contextual Info: AP60T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 18mΩ ID G 67A S Description Advanced Power MOSFETs from APEC provide the |
Original |
AP60T10GS/P O-263 AP60T10GP) O-220 10stics 100us 100ms | |
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Contextual Info: AP60T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance Fast Switching Characteristic BVDSS 100V RDS ON 18m ID G 67A S Description Advanced Power MOSFETs from APEC provide the |
Original |
AP60T10GS/P O-220 O-263 AP60T10GP) 100us 100ms | |
GP 830 diode
Abstract: AP60T10GP-HF-3TB
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Original |
AP60T10GP/S-HF-3 O-263 AP60T10GS-HF-3 O-263 AP60T10GP-HF-3 O-220 AP60T10 60T10GS GP 830 diode AP60T10GP-HF-3TB |