APD 400- 700 NM Search Results

PerkinElmer Avalanche Photodiode

Contextual Info: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits

Contextual Info: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.

Si apd photodiode

Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
Contextual Info: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.

Contextual Info: Si APD S12023シリーズなど 低バイアス動作タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDで、200 V以下の低電圧で動作が可能です。空間光伝送・光波距離計などの用途に適して います。 特長 用途

Contextual Info: Si APD S6045/S12060シリーズ 低温度係数タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDです。動作電圧の温度係数が低く設計されており、広い温度範囲で安定した動作が可能です。 光波距離計・空間光伝送などの用途に適しています。

SAT800X

Abstract: SAT3000 SAT3000x TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000
Contextual Info: Silicon Avalanche Photodiode SAT-Series DESCRIPTION The SAT-Series is based on a “reach-through” structure for excellent quantum efficiency, high speed and targeted for the 1060 nm detection region. The chip is hermetically sealed in a modified TO-8 / TO-5

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features

Contextual Info: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features

avalanche photodiode bias and high voltage

Abstract: SAE500VS SAE500VX photodiode responsivity 1.1 avalanche photodiode bias
Contextual Info: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak

avalanche photodiode bias

Abstract: sae500vs
Contextual Info: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity

NDL5516PC

Contextual Info: DATA SHEET PHOTO DIODE NDL5516P 080 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5516P is an InGaAs avalanche photodiode module with multimode fiber and Internal thermoelectric cooler. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as

SAR-500

Abstract: ABC550-04 SAR500H2 apd 400- 700 nm IAE200 SAT800H5 SAR500H4 SAR1500H4 SAR500H5 InGaas APD photodiode, 1550 sensitivity
Contextual Info: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and

AD-LA-16-9-DIL 18

Abstract: APD Array apd 400- 700 nm AD-LA-16-9-DIL
Contextual Info: preliminary AD-LA-16-9-DIL 18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760 to 910 nm high speed, low noise good uniformity between elements low slope multiplication curve SSO-AD-series Spectral Responsivity at M=1

ABC550-04

Abstract: SAR1500H4
Contextual Info: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

nir source

Abstract: apd 400- 700 nm
Contextual Info: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm

nir source

Contextual Info: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)

UBR10000

Abstract: nir source
Contextual Info: SSO-AD-230 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 active area 1) 0,042 mm ∅ 230 µm

apd 400- 700 nm

Contextual Info: SSO-AD-500 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 Active area 1) 0,196 mm ∅ 500 µm

S12926

Abstract: S12926-05
Contextual Info: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード 内 部 増 倍 機 能 を もった 高 速・高 感 度 の フォト ダ イ オ ード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)

ABC550-04

Contextual Info: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and