APT10050 Search Results
APT10050 Price and Stock
Microchip Technology Inc APT10050LVRGMOSFET N-CH 1000V 21A TO264 |
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APT10050LVRG | 1,067 |
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APT10050LVRG | Tube | 20 Weeks |
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Microchip Technology Inc APT10050JVFRMOSFET N-CH 1000V 19A ISOTOP |
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APT10050JVFR | Tube | 26 Weeks |
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Microchip Technology Inc APT10050LVFRGMOSFET N-CH 1000V 21A TO264 |
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APT10050LVFRG | Tube | 26 Weeks | 25 |
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APT10050LVFRG | 27 Weeks | 25 |
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Microchip Technology Inc APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAX |
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APT10050B2VFRG | Tube | 30 |
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APT10050B2VFRG | Tube | 26 Weeks | 30 |
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APT10050B2VFRG | 28 Weeks | 30 |
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APT10050B2VFRG | 27 Weeks | 30 |
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Microchip Technology Inc APT10050JNMOSFET MOS 4 1000 V 500 mOhm SOT-227, Projected EOL: 2044-04-30 - Contact for Pricing |
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APT10050JN | 20 Weeks |
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APT10050JN | 1 |
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APT10050 Datasheets (19)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT10050B2LC | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 69.6KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050B2VFR | Advanced Power Technology | POWER MOS V 1000V 21A 0.500 Ohm | Original | 110.19KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050B2VFR |
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Power MOS V FREDFET | Original | 65KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050B2VFRG |
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MOSFET N-CH 1000V 21A T-MAX | Original | 70KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050B2VR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 61.18KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050B2VR |
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Power MOS V MOSFET | Original | 60.62KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050JLC | Advanced Power Technology | POWER MOS VI 1000V 19A 0.500 Ohm | Original | 40.4KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050JN | Advanced Power Technology | N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET | Original | 61.85KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050JVFR | Advanced Power Technology | POWER MOS V 1000V 19A 0.500 Ohm | Original | 72.86KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050JVFR |
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Power MOS V FREDFET | Original | 65.81KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050JVR |
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Power MOS V MOSFET | Original | 69.79KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LLC | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 69.6KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LVFR | Advanced Power Technology | POWER MOS V 1000V 21A 0.500 Ohm | Original | 110.19KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LVFR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 66.58KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT10050LVFR |
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Power MOS V FREDFET | Original | 65KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LVFRG |
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MOSFET N-CH 1000V 21A TO264 | Original | 62.33KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LVR | Cooper Bussmann | Industrial HRC Fuse | Original | 15.29KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LVR |
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Power MOS V MOSFET | Original | 62.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT10050LVRG |
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MOSFET N-CH 1000V 21A TO264 | Original | 62.33KB |
APT10050 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT10050LVR O-264 | |
Contextual Info: APT10050JVR 19A 0.500Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050JVR OT-227 E145592 | |
APT10050JVFRContextual Info: APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050JVFR OT-227 E145592 APT10050JVFR | |
APT10050B2VFR
Abstract: APT10050LVFR
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APT10050B2VFR APT10050LVFR O-264 O-264 APT10050 O-247 APT10050B2VFR APT10050LVFR | |
APT10050B2VRContextual Info: APT10050B2VR 21A 0.500Ω 1000V POWER MOS V T-MAX™ Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
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APT10050B2VR O-247 APT10050B2VR | |
Contextual Info: APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050JVFR OT-227 E145592 | |
l0ua
Abstract: byv06
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OCR Scan |
APT10050CFN APT9050CFN D-750 l0ua byv06 | |
Contextual Info: • R r M A d van ced APT10050B2VR po w er Te c h n o lo g y 10 0 0 v 21 a o .s o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT10050B2VR O-247 | |
Contextual Info: A dvanced P ow er Te c h n o l o g y APT10050JN 1000V 20.5A 0.50Í2 ISOTOP® S Ù " U L Recognized" File No. E145592 S POWER MOS IV« SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT10050JN E145592 10050JN OT-227 | |
Contextual Info: APT10050LVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOSV 21A 0.500Í2 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT10050LVFR O-264 APT10050LVR O-264AA | |
Contextual Info: A d van ced APT10050B2VR po w er Te c h n o l o g y 1000V 21A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT10050B2VR MIL-STD-750 ev050-5614 GDD2177 | |
APT10050JN
Abstract: DSA0059686 10050JN N mos 100v 100A
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APT10050JN E145592 10050JN Junctio11 DSA0059686 10050JN N mos 100v 100A | |
Contextual Info: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050LVFR O-264 O-264 APT10050LVFR | |
APT10050B2LC
Abstract: APT10050LLC
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APT10050B2LC APT10050LLC O-264 O-264 APT10050 Drain-Sou123) O-247 APT10050LLC | |
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Contextual Info: APT10050LVFR A D V A N CED PO W ER Te c h n o l o g y 1000V POWER MOS V 21A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT10050LVFR O-264 APT10050LVFR | |
APT9050CFNContextual Info: r □BSTTO^ 0000033 T7M BiAVP blE T> ADVANCE» POWER TECHNOLOGY A D V A N C ED P O W ER T e c h n o lo g y APT10050CFN 1000V 22.0A 0.50 £i APT9050CFN 900V 22.0A 0.50 ß P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH;, 1 VOLTAGE POWER MOSFETS MAXIMUM RATINGS |
OCR Scan |
APT10Ã 50CFN APT9050CFN 03CK02S MIL-STD-750 | |
APT10050LVFRContextual Info: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050LVFR O-264 O-264 APT10050LVFR | |
10050JN
Abstract: apt10050jn
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OCR Scan |
APT10050JN 10050JN OT-227 apt10050jn | |
TO-264AA
Abstract: APT10050LVR
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OCR Scan |
APT10050LVR O-264 APT10050LVR MIL-STD-750 O-264AA TO-264AA | |
APT10050LVR
Abstract: B21 diode
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OCR Scan |
APT10050LVFR O-264 APT10050LVR 00A/ns, O-264AA B21 diode | |
Contextual Info: O A dvanced P ow er T e c h n o lo g y 9 D APT10050JN ° s w 1000V 20.5A 0.500 ? ISOTOP 5 M " U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol ^DSS |
OCR Scan |
E145592 10050JN CSOT-227 | |
APT10050B2LC
Abstract: APT10050LLC
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APT10050B2LC APT10050LLC O-264 O-264 APT10050 O-247 APT10050B2LC APT10050LLC | |
diode sot 143 s5Contextual Info: APT10050JVFR ADVANCED PO W ER Te c h n o l o g y 1000V POWER MOS V 19A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT10050JVFR OT-227 E145592 diode sot 143 s5 | |
Contextual Info: APT10050JVFR 19A 0.500Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050JVFR OT-227 E145592 |