APT1201 Search Results

APT1201R2BFLL

Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

Contextual Info: APT1201R5BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 1200V io a 1.500a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT1201R4BLL

Abstract: APT1201R4SLL
Contextual Info: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700

APT1201R2BFLL

Abstract: APT1201R2SFLL
Contextual Info: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT1201R4BFLL

Abstract: 05-07392 APT1201R4SFLL APT60D120B APT1201R4BFLLG
Contextual Info: APT1201R4BFLL G APT1201R4SFLL(G) 1200V POWER MOS 7 R 9A 1.50 Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

APT1201R2

Contextual Info: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT1201R6BVR

Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TC 7107

Contextual Info: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TC 7107

Abstract: IL 7107 N APT1201R2BLL APT1201R2SLL
Contextual Info: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT1201R6BVR

Abstract: APT1201R6SVR
Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1201R4BFLL

Abstract: APT1201R4SFLL 05-07392
Contextual Info: APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT1201R6BVFR

Abstract: APT1201R6SVFR
Contextual Info: APT1201R6BVFR APT1201R6SVFR 1200V POWER MOS V FREDFET 8A 1.600Ω BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1201R2BFLL

Abstract: DSA00757 APT1201
Contextual Info: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V R POWER MOS 7 MOSFET BLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1201R5BFVR

Abstract: APT1201R5BVFR APT1201R5SFVR
Contextual Info: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1201R2BFLL

Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

Contextual Info: APT1201R4BFLL G APT1201R4SFLL(G) 1200V POWER MOS 7 R 9A 1.50 Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

APT1201R6BVR

Abstract: BAT 545
Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT1201R4BFLL

Abstract: APT1201R4SFLL APT60D120B 05-07392
Contextual Info: APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON