APT40M Search Results

Contextual Info: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT40M35PVR 400V 89A 0.035Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

"DIODE" SY 171 1 g

Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
Contextual Info: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise

APT40M70JVR

Abstract: EN805
Contextual Info: • R A dvan c ed W/Æ P ow er Techno lo g y APT40M70JVR 4oov 53a o.o7oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TI OAE

Contextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

diode sy 171 10

Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
Contextual Info: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*

40M75JN

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT40M75JN 400V 56.0A 0.075£2 APT40M90JN 400V 51.0A 0.090£2 ISOTOP* "UL Recognized" File No. E145592 S N-CHANNEL ENHANCEMENT MOI^HIg ITw JLT^GE MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage A PT 40M75JN

Contextual Info: APT40M35JVR A dvanced P o w er Te c h n o lo g y 400V 93A 0.035Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT40M70JVR 53A 0.070Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

To267

Abstract: TO-267
Contextual Info: APT40M82WVR 44A 0.082Ω 400V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A d van ced P o w er Te c h n o l o g y APT40M42JN 400V 86A 0.042«! "UL Recognized" File No. E145592 S IS O T O P 1 POWER MOS IV® SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified

Contextual Info: APT40M70JVR A DVAN CED PO W ER Te c h n o lo g y 400V 53A 0.070Q POWER MOSV Power MOS V'" is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT40M35PVR 400V W 89A 0.035W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Contextual Info: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT40M70JVFR 400V 53A 0.070Ω Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT40M35JVFR 400V Ω 93A 0.035Ω POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: AD VA NC ED PO WE R T E C H N O L O G Y □ EST'IO'I 0 0 0 0 5 0 4 bTB * A V P 41E D A Ô'W dvanced P O W iz R O s {2 ) 'T - ÿ i- is . APT40M80AFN 400V 58.0A 0.08; APT35M80AFN 350V 58.0A 0.08L POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFE

APT8030JN

Abstract: apt20m25jnr APT8018JNFR apt10050jn APT5012 apt5010jn
Contextual Info: w!Zá A d vanced POW ER TE€2HN0L0GY' APT Product Selector Guide Rds ON (ohms) (watts) (amperes) 100 0.013 520 150 APT10M13JNR+ 4-7 200 0.025 520 100 APT20M25JNR+ 8-11 300 0.045 520 70 APT30M45JNR+ 12-15 400 0.075 0.042 520 690 56 86 APT40M75JN APT40M42JN

APT40M70B2VFR

Abstract: APT40M70B2VFRG APT40M70LVFR APT40M70LVFRG
Contextual Info: 400V 57A APT40M70B2VFR Ω 0.070Ω APT40M70LVFR APT40M70B2VFRG* APT40M70LVFRG* *G POWER MOS V Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

Contextual Info: 400V 57A APT40M70B2VFR Ω 0.070Ω APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G POWER MOS V Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

APT40M35JVFR

Contextual Info: APT40M35JVFR 400V Ω 0.035Ω 93A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT40M70JVFR

Contextual Info: APT40M70JVFR 400V 53A 0.070Ω Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced P o w er T e c h n o lo g y APT40M42JN 400V 86A 0.042Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV« SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.