APT5012 Search Results
APT5012 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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APT5012 | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Original | 63.2KB | 4 | ||
APT5012JN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET | Original | 62.2KB | 4 | ||
APT5012JN |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 43A ISOTOP | Original | 67.01KB | |||
APT5012LNR | Advanced Power Technology | Power MOS IV, TO-264 | Scan | 99.58KB | 2 | ||
APT5012WVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 63.2KB | 4 |
APT5012 Price and Stock
Microchip Technology Inc APT5012JNMOSFET N-CH 500V 43A ISOTOP |
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APT5012JN | Tray |
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Microchip Technology Inc APT5012WVRMosfet _ CUSTOM, Projected EOL: 2049-02-05 - Contact for Pricing |
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APT5012WVR |
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Microchip Technology Inc APT5012LNRGMOSFET MOS 4 Rugged 500 V 120 mOhm TO-264, Projected EOL: 2044-04-30 - Contact for Pricing |
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APT5012LNRG | 20 Weeks |
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APT5012LNRG |
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APT5012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT5012JNU2 5012JNU2 OT-227 Page68 | |
Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227 | |
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd |
OCR Scan |
APT5012JNU3 5012JNU3 | |
c 503 K
Abstract: lg ds 325
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OCR Scan |
APT5012JNU3 5012JNU3 OT-227 c 503 K lg ds 325 | |
Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS |
OCR Scan |
APT5012JNU2 5012JNU2 OT-227 | |
5010JN
Abstract: APT5010 5012JN APT 5060
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E145592 5010JN 5012JN APT5010/5012JN OT-227 APT5010 APT 5060 | |
Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5012LNR O S POWER MOS IV 500V 42.0A 0.12Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified. Parameter |
OCR Scan |
APT5012LNR O-264AA MIL-STD-750 | |
APT5012LNR
Abstract: diode AR s1 56 XS16
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APT5012LNR MIL-STD-750 O-264AA diode AR s1 56 XS16 | |
Contextual Info: APT5012WVR 500V 40A 0.120Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5012WVR O-267 O-267 | |
Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5012WVR APT5012W O-267 | |
APT5012LNR
Abstract: max8700 APT5012LN APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR
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OCR Scan |
APT5012LN APT5012LNR max8700 APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR | |
5012JN
Abstract: APT5012JNU3 APTS012JNU3 APT5012
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APT5012JNU3 5012JNU3 OT-227 00Dlbà 5012JN APTS012JNU3 APT5012 | |
APT5012JNU3Contextual Info: A dvanced P o w er Te c h n o l o g y ' -O A APT5012JNU3 500V 43A 0.12Í2 ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd I I DM’ IM V GS PD t j -t s i g All Ratings: = 2 5 °C unless otherwise specified. |
OCR Scan |
APT5012JNU3 5012JNU3 OT-227 APT5012JNU3 | |
APT5010
Abstract: LD 1170
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OCR Scan |
APT5010JN APT5012JN E145592 5010UN 5012J OT-227 APT5010 LD 1170 | |
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Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2 |
OCR Scan |
APT5012JNU2 5012JNU2 OT-227 | |
APT5012JNU2
Abstract: ST-200 transformer DIODE BAT 17
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APT5012JNU2 5012JNU2 OT-227 ST-200 transformer DIODE BAT 17 | |
APT5012JNU2
Abstract: tl3060 rrmk 1
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APT5012JNU2 5012JWU2 OT-227 APT5012JNU2 tl3060 rrmk 1 | |
APT5012LNB
Abstract: APT5012LNR APT5012L
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APT5012LNR APT5012LNR MIL-STD-750 -264A APT5012LNB APT5012L | |
MAC202
Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
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ADC12130CIN 12-Bit LM2587 LM2594N50 LM50CIM3 LM6171BIN LP2980IM5-50 CA3338E HFA1103IP HIP4080AIP MAC202 led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC | |
Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN |
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APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
800w power amplifier circuit diagram
Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
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APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques" | |
APT802R4KN
Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
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APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR APT10M13JNR APT10M15JNR APT802R4KN APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet R6KN |