Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    APT5012 Search Results

    APT5012 Datasheets (5)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT5012
    Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF 63.2KB 4
    APT5012JN
    Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF 62.2KB 4
    APT5012JN
    Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 43A ISOTOP Original PDF 67.01KB
    APT5012LNR
    Advanced Power Technology Power MOS IV, TO-264 Scan PDF 99.58KB 2
    APT5012WVR
    Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF 63.2KB 4
    SF Impression Pixel

    APT5012 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT5012JN

    MOSFET N-CH 500V 43A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5012JN Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Microchip Technology Inc APT5012WVR

    Mosfet _ CUSTOM, Projected EOL: 2049-02-05 - Contact for Pricing
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Microchip Technology Inc APT5012WVR
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Microchip Technology Inc APT5012LNRG

    MOSFET MOS 4 Rugged 500 V 120 mOhm TO-264, Projected EOL: 2044-04-30 - Contact for Pricing
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Microchip Technology Inc APT5012LNRG 20 Weeks
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Onlinecomponents.com APT5012LNRG
    • 1 $0.00
    • 10 $0.00
    • 100 $0.00
    • 1000 $0.00
    • 10000 $0.00
    Buy Now

    APT5012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT5012JNU2 5012JNU2 OT-227 Page68 PDF

    Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227 PDF

    Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd


    OCR Scan
    APT5012JNU3 5012JNU3 PDF

    c 503 K

    Abstract: lg ds 325
    Contextual Info: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT5012JNU3 5012JNU3 OT-227 c 503 K lg ds 325 PDF

    Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS


    OCR Scan
    APT5012JNU2 5012JNU2 OT-227 PDF

    5010JN

    Abstract: APT5010 5012JN APT 5060
    Contextual Info: A D VA N CED PO W ER Te c h n o lo g y APT5010JN APT5012JN ISOTOP* 500V 500V 48.0 A 0.10Q 43.0 A 0.12Q S W 'U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan
    E145592 5010JN 5012JN APT5010/5012JN OT-227 APT5010 APT 5060 PDF

    Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5012LNR O S POWER MOS IV 500V 42.0A 0.12Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified. Parameter


    OCR Scan
    APT5012LNR O-264AA MIL-STD-750 PDF

    APT5012LNR

    Abstract: diode AR s1 56 XS16
    Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT5012LNR O s POWER MOS IV‘ 500V 42.0A 0.12a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM R A T IN G S Symbol V DSS 'dm V GS V GSM All Rutinn*- T - Parameter Drain-Source Voltage


    OCR Scan
    APT5012LNR MIL-STD-750 O-264AA diode AR s1 56 XS16 PDF

    Contextual Info: APT5012WVR 500V 40A 0.120Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5012WVR O-267 O-267 PDF

    Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5012WVR APT5012W O-267 PDF

    APT5012LNR

    Abstract: max8700 APT5012LN APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR
    Contextual Info: ADVANCED RO W ER Te c h n o l o g y O D O APT5012LN R s PO W ER M O S IV® 500V 42.0A 0.12^ A V A LA N C H E RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T I N G S A ll Ratings: T c = 2 5 CC un less otherw ise sp ecified .


    OCR Scan
    APT5012LN APT5012LNR max8700 APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR PDF

    5012JN

    Abstract: APT5012JNU3 APTS012JNU3 APT5012
    Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T


    OCR Scan
    APT5012JNU3 5012JNU3 OT-227 00Dlbà 5012JN APTS012JNU3 APT5012 PDF

    APT5012JNU3

    Contextual Info: A dvanced P o w er Te c h n o l o g y ' -O A APT5012JNU3 500V 43A 0.12Í2 ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd I I DM’ IM V GS PD t j -t s i g All Ratings: = 2 5 °C unless otherwise specified.


    OCR Scan
    APT5012JNU3 5012JNU3 OT-227 APT5012JNU3 PDF

    APT5010

    Abstract: LD 1170
    Contextual Info: A dvanced P o w er Te c h n o l o g y O D O APT5010JN APT5012JN S ISOTOP 500V 500V 48.0A 0.1 Oí2 43.0A 0.1 2Ü. "UL Recognized" File No. E145592 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol APT 5010UN APT


    OCR Scan
    APT5010JN APT5012JN E145592 5010UN 5012J OT-227 APT5010 LD 1170 PDF

    Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2


    OCR Scan
    APT5012JNU2 5012JNU2 OT-227 PDF

    APT5012JNU2

    Abstract: ST-200 transformer DIODE BAT 17
    Contextual Info: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m


    OCR Scan
    APT5012JNU2 5012JNU2 OT-227 ST-200 transformer DIODE BAT 17 PDF

    APT5012JNU2

    Abstract: tl3060 rrmk 1
    Contextual Info: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT


    OCR Scan
    APT5012JNU2 5012JWU2 OT-227 APT5012JNU2 tl3060 rrmk 1 PDF

    APT5012LNB

    Abstract: APT5012LNR APT5012L
    Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D APT5012LNR Ô S 3* WER MOS 500V 42.0A 0.12Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol VDSS 'o ' dm VGS VGSM All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan
    APT5012LNR APT5012LNR MIL-STD-750 -264A APT5012LNB APT5012L PDF

    MAC202

    Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
    Contextual Info: INDEX Order Code Description Manufacturer Page Number ADC12130CIN Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converter with MUX and Sample/Hold LM2587 Series Simple Switcher 5A Flyback Regulator LM2594N50 Simple Switcher® Power Converter LM50CIM3


    Original
    ADC12130CIN 12-Bit LM2587 LM2594N50 LM50CIM3 LM6171BIN LP2980IM5-50 CA3338E HFA1103IP HIP4080AIP MAC202 led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC PDF

    Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN


    OCR Scan
    APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    800w power amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
    Contextual Info: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager


    Original
    APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques" PDF

    APT802R4KN

    Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
    Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED


    OCR Scan
    APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR APT10M13JNR APT10M15JNR APT802R4KN APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet R6KN PDF