APT5040 Search Results

Contextual Info: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

APT5040BNFR

Contextual Info: ADVANCED PO W ER Te c h n o l o g y * APT5040BNFR APT5050BNFR POWER MOS IV« 500V 500V 16A 0.40Ü 14A 0.500 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT5040CN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

APT5040AN

Abstract: L038 APT4540AN APT4550AN APT5050AN
Contextual Info: ADVANCFD POWFR POWER TECHNOLOGY M1E I> m □EST'iaT DDDOMbM A d v a P o w *114 H A V P n e c e d - t s r v i s T e c h n o lo g y APT5040AN 500V 14.5A 0.40 a APT4540AN 450V 14.5A 0.40 a APT5050AN 500V 13.0A 0.50 £2 MOS IV _ APT4550AN450V13.0A 0.50 Q.

APT5040BNR

Abstract: APT5050BNR APT5040BN
Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5040BNR APT5050BNR O S POWER MOS IV< 500V 16.0A 0.40Q 500V 14.0A 0.50Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: A dvanced P ow er Te c h n o l o g y APT5040BNFR APT5050BNFR EP WER MOS m 500V 500V 16A 0.4012 14A 0.50D Í .VALANCHE RATED FREDFET N -C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specitied.

diode 2U 88

Abstract: 2u 87 x diode APT5040CN MJ 800
Contextual Info: D TO-254 G 500V 13.0A 0.400Ω APT5040CNR S TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Low Gate Charge • Similar to the 2N7228, JX2N7228 and JV2N7228 MAXIMUM RATINGS

Contextual Info: ADVANCED POW ER Te c h n o l o g y O D APT5040BNR APT5050BNR O S POWER MOS IVs SOOV 16.0A 0.40U 500V 14.0A 0.5012 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Symbol ^DSS All Ratings: T c = 25°C unless otherwise specified.

APT4540BN

Abstract: 5040bn apt5040
Contextual Info: ADVANCED PO W ER T e c h n o lo g y 9 O D APT5040BN APT4540BN APT5050BN APT4550BN Ô s POWER MOS IV 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40Q 0.40Q 0.50Q 0.50Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT5040BNR 500V 16.0A 0.4OSI APT5050BNR 500V 14.0A 0.50Q Q D O S POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol ^DSS All Ratings: T c = 25°C unless otherwise specified.

5040BNF

Abstract: APT5040BNF 5040bn 040Ohms APT5050BNF 3040-1-D 500V14A
Contextual Info: A d va n ced P o w er Te c h n o lo g y * APT5040BNF 500V 16A 0.400 APT5050BNF 500V 14A 0.500 POWER MOS IV FAST RECOVERY MOSFET FAMILY N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

5040bn

Abstract: APT5050BN
Contextual Info: A dvanced P ow er Tec h n o lo g y O D O APT5040BN APT4540BN APT5050BN APT4550BN s Q? WER MOS H® 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40Í1 0.40Q 0.50Q 0.50Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS A ll R a tin g s : T c = 2 5 ° C u n le s s o th e rw is e s p e c ifie d .

Contextual Info: APT5040BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)16 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)

Contextual Info: A d van ced P o w er Te c h n o l o g y APT5040CNR POWER MOS IV 500V 13.0A 0.400ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7228, JX2N7228 and JV2N7228

Contextual Info: ADVANCED POUER TECHNOLOGY blE H • O B ä T W i 00007L1 IS! ■ AVP ADVANCED POWER! Te c h n o l o g y O O M O s POWER MOS IV APT5040CN APT4540CN APT5050CN APT4550CN 500V 13.0A 0.40D 450V 13.0A 0.40Î2 500V 11.5A 0.50Î2 450V 11.5A 0.50Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: A dvanced P ow er Tec h n o lo g y O D APT5040BNR APT5050BNR O S 0» WER MOS 500V 16.0A o.4oa 500V 14.0A 0.50Î2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified. APT5040BNR

Contextual Info: APT5040AN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)14.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)198 Minimum Operating Temp (øC)

Contextual Info: APT5040BNF Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)16.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)64 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240# Minimum Operating Temp (øC)-55

5040bn

Abstract: APT5040BN apt5040 APT4540BN 5050BN APT5050BN APT4550BN 3SB diode f3370 88HC
Contextual Info: A d van ced P o w er r Te c h n o l o g y " O D APT5040BN APT4540BN APT5050BN APT4550BN Ô s POWER MOS IV« 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40U 0.40Q 0.50Q 0.50Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S

Contextual Info: APT5040KFLL 500V 17A 0.400Ω POWER MOS 7 R FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT5040BN

Abstract: 5040bn APT4540BN
Contextual Info: O A d van ced R o w er Te c h n o l o g y D APT5040BN APT4540BN APT5050BN APT4550BN O s POWER MOS IV 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40Í2 0.4012 0.50Q 0.50Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT5040KFLL

Abstract: UJ 47
Contextual Info: APT5040KFLL 500V 17A 0.400Ω POWER MOS 7 R FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT5040BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)16 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)