APT6030BN Search Results

Contextual Info: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT6030BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)92 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360 Minimum Operating Temp (øC)-55õ

DLS FT 031

Abstract: TL 084L APT6030BNR 25CC APT6033BNR
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

APT6030BNR

Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter

diode U3d

Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
Contextual Info: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

D 92 M - 03 DIODE

Abstract: 6030bn
Contextual Info: A dvanced P ow er Te c h n o l o g y O D O APT6030BN 600V 23.0A 0.30CÌ APT6033BN 600V 22.0A 0.33ÍÍ S _ ^ _ GB WER MOS \V® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN

Contextual Info: APT6030BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)

6030BN

Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN
Contextual Info: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT

Contextual Info: A d v a n ced P o w er Te c h n o l o g y 8 O D O S POWER MOS IV APT6030BN 600V 23.0A 0.30Q APT6033BN 600V 22.0A 0.330 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT

6030bn

Abstract: APT6030BN APT6033BN
Contextual Info: D TO-247 G S POWER MOS IV APT6030BN 600V 23.0A 0.30Ω APT6033BN 600V 22.0A 0.33Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT6030BN 600V 23.0A 0.30Í1 APT6033BN 600V 22.0A 0.33Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

APT5085BN

Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Contextual Info: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =